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Results:
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Results: 7
Modelling of silica film growth by chemical vapour deposition: Influence of the interface properties
Authors:
Vazquez, L
Ojeda, F
Cuerno, R
Salvarezza, R
Albella, JM
Citation: L. Vazquez et al., Modelling of silica film growth by chemical vapour deposition: Influence of the interface properties, J PHYS IV, 11(PR3), 2001, pp. 129-140
Authors:
Moro, E
Cuerno, R
Citation: E. Moro et R. Cuerno, Variational mean-field study of a continuum model of crystalline tensionless surfaces - art. no. 036104, PHYS REV E, 6303(3), 2001, pp. 6104
Authors:
Cuerno, R
Castro, M
Citation: R. Cuerno et M. Castro, Transients due to instabilities hinder Kardar-Parisi-Zhang scaling: A unified derivation for surface growth by electrochemical and chemical vapor deposition - art. no. 236103, PHYS REV L, 8723(23), 2001, pp. 6103
Authors:
Gago, R
Vazquez, L
Cuerno, R
Varela, M
Ballesteros, C
Albella, JM
Citation: R. Gago et al., Production of ordered silicon nanocrystals by low-energy ion sputtering, APPL PHYS L, 78(21), 2001, pp. 3316-3318
Authors:
Castro, M
Cuerno, R
Sanchez, A
Dominguez-Adame, F
Citation: M. Castro et al., Multiparticle biased diffusion-limited aggregation with surface diffusion:A comprehensive model of electrodeposition, PHYS REV E, 62(1), 2000, pp. 161-173
Authors:
Ojeda, F
Cuerno, R
Salvarezza, R
Vazquez, L
Citation: F. Ojeda et al., Dynamics of rough interfaces in chemical vapor deposition: Experiments anda model for silica films, PHYS REV L, 84(14), 2000, pp. 3125-3128
Authors:
Ojeda, F
Cuerno, R
Salvarezza, R
Vazquez, L
Citation: F. Ojeda et al., Study of the growth mechanisms of low-pressure chemically vapour depositedsilica films, J PHYS IV, 9(P8), 1999, pp. 265-271
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