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Results:
1-5
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Results: 5
Highly NO2 sensitive pseudo Schottky barrier diodes on p-type InP with improved electrical characteristics
Authors:
Talazac, L Barbarin, F Varenne, C Cuminal, Y
Citation:
L. Talazac et al., Highly NO2 sensitive pseudo Schottky barrier diodes on p-type InP with improved electrical characteristics, SENS ACTU-B, 77(1-2), 2001, pp. 447-454
Improvement of Sb-based multiquantum well lasers by Coulomb enhancement
Authors:
Christol, P Bigenwald, P Joullie, A Cuminal, Y Baranov, AN Bertru, N Rouillard, Y
Citation:
P. Christol et al., Improvement of Sb-based multiquantum well lasers by Coulomb enhancement, IEE P-OPTO, 146(1), 1999, pp. 3-8
Continuous-wave operation of GaInAsSb-GaSb Type-II quantum-well ridge-lasers
Authors:
Joullie, A Glastre, G Blondeau, R Nicolas, JC Cuminal, Y Baranov, AN Wilk, A Garcia, M Grech, P Alibert, C
Citation:
A. Joullie et al., Continuous-wave operation of GaInAsSb-GaSb Type-II quantum-well ridge-lasers, IEEE S T QU, 5(3), 1999, pp. 711-714
Room-temperature 2.63 mu m GaInAsSb/GaSb strained quantum-well laser diodes
Authors:
Cuminal, Y Baranov, AN Bec, D Grech, P Garcia, M Boissier, G Joullie, A Glastre, G Blondeau, R
Citation:
Y. Cuminal et al., Room-temperature 2.63 mu m GaInAsSb/GaSb strained quantum-well laser diodes, SEMIC SCI T, 14(3), 1999, pp. 283-288
Spontaneous emission from InAs/GaSb quantum wells grown by molecular beam epitaxy
Authors:
Bertru, N Baranov, AN Cuminal, Y Boissier, G Alibert, C Joullie, A Lambert, B
Citation:
N. Bertru et al., Spontaneous emission from InAs/GaSb quantum wells grown by molecular beam epitaxy, J APPL PHYS, 85(3), 1999, pp. 1989-1991
Risultati:
1-5
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