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Results:
1-7
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Results: 7
Authors:
Cheng, ZY
Currie, MT
Leitz, CW
Taraschi, G
Fitzgerald, EA
Hoyt, JL
Antoniadas, DA
Citation: Zy. Cheng et al., Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates, IEEE ELEC D, 22(7), 2001, pp. 321-323
Authors:
Tan, CS
Choi, WK
Bera, LK
Pey, KL
Antoniadis, DA
Fitzgerald, EA
Currie, MT
Maiti, CK
Citation: Cs. Tan et al., N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD, SOL ST ELEC, 45(11), 2001, pp. 1945-1949
Authors:
Leitz, CW
Currie, MT
Kim, AY
Lai, J
Robbins, E
Fitzgerald, EA
Bulsara, MT
Citation: Cw. Leitz et al., Dislocation glide and blocking kinetics in compositionally graded SiGe/Si, J APPL PHYS, 90(6), 2001, pp. 2730-2736
Authors:
Lee, ML
Leitz, CW
Cheng, Z
Pitera, AJ
Langdo, T
Currie, MT
Taraschi, G
Fitzgerald, EA
Antoniadis, DA
Citation: Ml. Lee et al., Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Si1-xGex/Si virtual substrates, APPL PHYS L, 79(20), 2001, pp. 3344-3346
Authors:
Langdo, TA
Leitz, CW
Currie, MT
Fitzgerald, EA
Lochtefeld, A
Antoniadis, DA
Citation: Ta. Langdo et al., High quality Ge on Si by epitaxial necking, APPL PHYS L, 76(25), 2000, pp. 3700-3702
Authors:
Fitzgerald, EA
Kim, AY
Currie, MT
Langdo, TA
Taraschi, G
Bulsara, MT
Citation: Ea. Fitzgerald et al., Dislocation dynamics in relaxed graded composition semiconductors, MAT SCI E B, 67(1-2), 1999, pp. 53-61
Authors:
Fitzgerald, EA
Currie, MT
Samavedam, SB
Langdo, TA
Taraschi, G
Yang, V
Leitz, CW
Bulsara, MT
Citation: Ea. Fitzgerald et al., Dislocations in relaxed SiGe/Si heterostructures, PHYS ST S-A, 171(1), 1999, pp. 227-238
Risultati:
1-7
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