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Authors: DICKMANN J RIEPE K GEYER A MAILE BE SCHURR A BERG M DAEMBKES H
Citation: J. Dickmann et al., IN(0.52)A(0.48)AS INXGA1-XAS (0.53-LESS-THAN-X-LESS-THAN-1.0) PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS WITH HIGH BREAKDOWN VOLTAGES- DESIGN AND PERFORMANCES/, JPN J A P 1, 35(1A), 1996, pp. 10-15

Authors: DICKMANN J BERG M GEYER A DAEMBKES H SCHOLZ F MOSER M
Citation: J. Dickmann et al., (AL0.7GA0.3)(0.5)IN0.5P IN0.15GA0.85AS/GAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS WITH VERY THIN HIGHLY P-DOPED SURFACE-LAYER/, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 2-7

Authors: DICKMANN J DAEMBKES H SCHILDBERG S FITTNG HJ ELLROD P TEGUDE FJ
Citation: J. Dickmann et al., ANALYTICAL MODEL TO DETERMINE THE GATE LEAKAGE CURRENT IN IN0.52AL0.48AS INXGA1-XAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORSCAUSED BY THERMIONIC FIELD-EMISSION/, JPN J A P 1, 33(4A), 1994, pp. 1735-1739

Authors: DICKMANN J KOSSLOWSKI S MAILE BE HASPEKLO H HEUTHE S GEYER A RIEPE K SCHURR A DAEMBKES H KUNZEL H BOTTCHER J
Citation: J. Dickmann et al., HIGH-GAIN 28 GHZ COPLANAR WAVE-GUIDE MONOLITHIC AMPLIFIER ON INP SUBSTRATE, Electronics Letters, 29(5), 1993, pp. 493-495
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