Authors:
DICKMANN J
RIEPE K
GEYER A
MAILE BE
SCHURR A
BERG M
DAEMBKES H
Citation: J. Dickmann et al., IN(0.52)A(0.48)AS INXGA1-XAS (0.53-LESS-THAN-X-LESS-THAN-1.0) PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS WITH HIGH BREAKDOWN VOLTAGES- DESIGN AND PERFORMANCES/, JPN J A P 1, 35(1A), 1996, pp. 10-15
Authors:
DICKMANN J
BERG M
GEYER A
DAEMBKES H
SCHOLZ F
MOSER M
Citation: J. Dickmann et al., (AL0.7GA0.3)(0.5)IN0.5P IN0.15GA0.85AS/GAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS WITH VERY THIN HIGHLY P-DOPED SURFACE-LAYER/, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 2-7
Authors:
DICKMANN J
DAEMBKES H
SCHILDBERG S
FITTNG HJ
ELLROD P
TEGUDE FJ
Citation: J. Dickmann et al., ANALYTICAL MODEL TO DETERMINE THE GATE LEAKAGE CURRENT IN IN0.52AL0.48AS INXGA1-XAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORSCAUSED BY THERMIONIC FIELD-EMISSION/, JPN J A P 1, 33(4A), 1994, pp. 1735-1739