Authors:
PETTERSSON PO
ZUR A
DANIEL ES
LEVY HJ
MARSH OJ
MCGILL TC
Citation: Po. Pettersson et al., DEPENDENCE OF THE I-V CURVE OF A METAL-INSULATOR-SEMICONDUCTOR SWITCHON INSULATOR THICKNESS - AN EXPERIMENTAL AND THEORETICAL INVESTIGATION, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 286-292
Citation: Es. Daniel et al., MACROSCOPIC AND MICROSCOPIC STUDIES OF ELECTRICAL-PROPERTIES OF VERY THIN SILICON DIOXIDE SUBJECT TO ELECTRICAL STRESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1089-1096
Citation: Es. Daniel et al., METHOD OF DATA-ANALYSIS THAT ELUCIDATES CONTRIBUTIONS TO THE T-CELL RECEPTOR REPERTOIRE, BioTechniques, 23(1), 1997, pp. 78
Citation: Es. Daniel et Dg. Haegert, METHOD TO IDENTIFY BIASES IN PCR AMPLIFICATION OF T-CELL RECEPTOR VARIABLE REGION GENES, BioTechniques, 20(4), 1996, pp. 600-602