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Results: 1-25 | 26-50 | 51-64

Results: 1-25/64

VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH SPATIALLY ADJUSTABLE DBRREFLECTIVITY TO ENABLE FREE-SPACE PHOTONIC REPEATERS

Authors: BOND AE DAPKUS PD

Citation: Ae. Bond et Pd. Dapkus, VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH SPATIALLY ADJUSTABLE DBRREFLECTIVITY TO ENABLE FREE-SPACE PHOTONIC REPEATERS, IEEE photonics technology letters, 10(5), 1998, pp. 636-638

APERTURE PLACEMENT EFFECTS IN OXIDE-DEFINED VERTICAL-CAVITY SURFACE-EMITTING LASERS

Authors: BOND AE DAPKUS PD OBRIEN JD

Citation: Ae. Bond et al., APERTURE PLACEMENT EFFECTS IN OXIDE-DEFINED VERTICAL-CAVITY SURFACE-EMITTING LASERS, IEEE photonics technology letters, 10(10), 1998, pp. 1362-1364

LOW-RESISTANCE INTRACAVITY-CONTACTED OXIDE-APERTURE VCSELS

Authors: MACDOUGAL MH GESKE J LIN CK BOND AE DAPKUS PD

Citation: Mh. Macdougal et al., LOW-RESISTANCE INTRACAVITY-CONTACTED OXIDE-APERTURE VCSELS, IEEE photonics technology letters, 10(1), 1998, pp. 9-11

THERMAL IMPEDANCE OF VCSELS WITH ALOX-GAAS DBRS

Authors: MACDOUGAL MH GESKE J LIN CK BOND AE DAPKUS PD

Citation: Mh. Macdougal et al., THERMAL IMPEDANCE OF VCSELS WITH ALOX-GAAS DBRS, IEEE photonics technology letters, 10(1), 1998, pp. 15-17

COMPOSITION CONTROL OF INGAASP IN METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING TERTIARYBUTYLPHOSPHINE AND TERTIARYBUTYLARSINE

Authors: KIM I UPPAL K CHOI WJ DAPKUS PD

Citation: I. Kim et al., COMPOSITION CONTROL OF INGAASP IN METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING TERTIARYBUTYLPHOSPHINE AND TERTIARYBUTYLARSINE, Journal of crystal growth, 193(3), 1998, pp. 293-299

GROWTH OF SINGLE-CRYSTAL GAN ON A SI SUBSTRATE USING OXIDIZED ALAS ASAN INTERMEDIATE LAYER

Authors: KOBAYASHI NP KOBAYASHI JT CHOI WJ DAPKUS PD ZHANG XG RICH DH

Citation: Np. Kobayashi et al., GROWTH OF SINGLE-CRYSTAL GAN ON A SI SUBSTRATE USING OXIDIZED ALAS ASAN INTERMEDIATE LAYER, Journal of crystal growth, 190, 1998, pp. 172-177

CATHODOLUMINESCENCE STUDY OF DISORDERING OF GAAS ALGAAS QUANTUM-WELLSUSING AN ALAS NATIVE-OXIDE AND THERMAL ANNEALING TECHNIQUE/

Authors: ZHANG X RICH DH LIN CK DAPKUS PD

Citation: X. Zhang et al., CATHODOLUMINESCENCE STUDY OF DISORDERING OF GAAS ALGAAS QUANTUM-WELLSUSING AN ALAS NATIVE-OXIDE AND THERMAL ANNEALING TECHNIQUE/, Journal of applied physics, 84(2), 1998, pp. 1095-1100

GAIN SATURATION IN TRAVELING-WAVE SEMICONDUCTOR OPTICAL AMPLIFIERS

Authors: KIM I UPPAL K DAPKUS PD

Citation: I. Kim et al., GAIN SATURATION IN TRAVELING-WAVE SEMICONDUCTOR OPTICAL AMPLIFIERS, IEEE journal of quantum electronics, 34(10), 1998, pp. 1949-1952

FILTER-FREE 4-WAVE-MIXING WAVELENGTH CONVERSION IN SEMICONDUCTOR OPTICAL AMPLIFIERS

Authors: ZHU DX TISHININ D UPPAL K DUBOVITSKY S BURGER J STEIER WH DAPKUS PD

Citation: Dx. Zhu et al., FILTER-FREE 4-WAVE-MIXING WAVELENGTH CONVERSION IN SEMICONDUCTOR OPTICAL AMPLIFIERS, Electronics Letters, 34(1), 1998, pp. 87-88

SELF-DEFINED ALAS-OXIDE-CURRENT-APERTURE BURIED HETEROSTRUCTURE VERTICAL-CAVITY SURFACE-EMITTING LASER

Authors: CHOI WJ DAPKUS PD

Citation: Wj. Choi et Pd. Dapkus, SELF-DEFINED ALAS-OXIDE-CURRENT-APERTURE BURIED HETEROSTRUCTURE VERTICAL-CAVITY SURFACE-EMITTING LASER, Applied physics letters, 73(12), 1998, pp. 1661-1663

SINGLE-CRYSTAL ALPHA-GAN GROWN ON A ALPHA-GA2O3 TEMPLATE LAYER

Authors: KOBAYASHI NP KOBAYASHI JT CHOI WJ DAPKUS PD

Citation: Np. Kobayashi et al., SINGLE-CRYSTAL ALPHA-GAN GROWN ON A ALPHA-GA2O3 TEMPLATE LAYER, Applied physics letters, 73(11), 1998, pp. 1553-1555

CARRIER RELAXATION AND RECOMBINATION IN AN INGAN GAN QUANTUM-WELL PROBED WITH TIME-RESOLVED CATHODOLUMINESCENCE/

Authors: ZHANG X RICH DH KOBAYASHI JT KOBAYASHI NP DAPKUS PD

Citation: X. Zhang et al., CARRIER RELAXATION AND RECOMBINATION IN AN INGAN GAN QUANTUM-WELL PROBED WITH TIME-RESOLVED CATHODOLUMINESCENCE/, Applied physics letters, 73(10), 1998, pp. 1430-1432

MONOLITHICALLY INTEGRATED SURFACE AND SUBSTRATE EMITTING VERTICAL-CAVITY LASERS FOR SMART PIXELS

Authors: BOND AE DAPKUS PD

Citation: Ae. Bond et Pd. Dapkus, MONOLITHICALLY INTEGRATED SURFACE AND SUBSTRATE EMITTING VERTICAL-CAVITY LASERS FOR SMART PIXELS, Applied physics letters, 73(1), 1998, pp. 19-21

INTRODUCTION TO THE ISSUE ON OPTOELECTRONIC MATERIALS AND PROCESSING

Authors: TSANG WT COLEMAN JJ DAPKUS PD COLDREN LA

Citation: Wt. Tsang et al., INTRODUCTION TO THE ISSUE ON OPTOELECTRONIC MATERIALS AND PROCESSING, IEEE journal of selected topics in quantum electronics, 3(3), 1997, pp. 709-711

DESIGN AND FABRICATION OF VCSELS WITH ALXOY-GAAS DBRS

Authors: MACDOUGAL MH DAPKUS PD BOND AE LIN CK GESKE J

Citation: Mh. Macdougal et al., DESIGN AND FABRICATION OF VCSELS WITH ALXOY-GAAS DBRS, IEEE journal of selected topics in quantum electronics, 3(3), 1997, pp. 905-915

STUDY OF 1.3-MU-M TAPERED WAVE-GUIDE SPOTSIZE TRANSFORMERS

Authors: UPPAL K TISHININ D KIM I DAPKUS PD

Citation: K. Uppal et al., STUDY OF 1.3-MU-M TAPERED WAVE-GUIDE SPOTSIZE TRANSFORMERS, IEEE journal of selected topics in quantum electronics, 3(3), 1997, pp. 975-979

A NOVEL ALL-OPTICAL SWITCH - THE WAVELENGTH RECOGNIZING SWITCH

Authors: ZHU DX DUBOVITSKY S STEIER WH UPPAL K TISHININ D BURGER J DAPKUS PD

Citation: Dx. Zhu et al., A NOVEL ALL-OPTICAL SWITCH - THE WAVELENGTH RECOGNIZING SWITCH, IEEE photonics technology letters, 9(8), 1997, pp. 1110-1112

WAVELENGTH SHIFT OF SELECTIVELY OXIDIZED ALXOY-ALGAAS-GAAS DISTRIBUTED BRAGG REFLECTORS

Authors: MACDOUGAL MH DAPKUS PD

Citation: Mh. Macdougal et Pd. Dapkus, WAVELENGTH SHIFT OF SELECTIVELY OXIDIZED ALXOY-ALGAAS-GAAS DISTRIBUTED BRAGG REFLECTORS, IEEE photonics technology letters, 9(7), 1997, pp. 884-886

1.3-MU-M POLARIZATION-INSENSITIVE AMPLIFIERS WITH INTEGRATED-MODE TRANSFORMERS

Authors: TISHININ D UPPAL K KIM I DAPKUS PD

Citation: D. Tishinin et al., 1.3-MU-M POLARIZATION-INSENSITIVE AMPLIFIERS WITH INTEGRATED-MODE TRANSFORMERS, IEEE photonics technology letters, 9(10), 1997, pp. 1337-1339

NUCLEATION AND GROWTH-BEHAVIOR FOR GAN GROWN ON (0001)SAPPHIRE VIA MULTISTEP GROWTH APPROACH

Authors: KOBAYASHI JT KOBAYASHI NP DAPKUS PD

Citation: Jt. Kobayashi et al., NUCLEATION AND GROWTH-BEHAVIOR FOR GAN GROWN ON (0001)SAPPHIRE VIA MULTISTEP GROWTH APPROACH, Journal of electronic materials, 26(10), 1997, pp. 1114-1117

CHARACTERIZATION OF MIXED STRAIN QUANTUM-WELL STRUCTURES

Authors: UPPAL K TISHININ D DAPKUS PD

Citation: K. Uppal et al., CHARACTERIZATION OF MIXED STRAIN QUANTUM-WELL STRUCTURES, Journal of applied physics, 81(1), 1997, pp. 390-393

AMBIPOLAR DIFFUSION-COEFFICIENT AND CARRIER LIFETIME IN A COMPRESSIVELY STRAINED INGAASP MULTIPLE-QUANTUM-WELL DEVICE

Authors: ZHU DX DUBOVITSKY S STEIER WH BURGER J TISHININ D UPPAL K DAPKUS PD

Citation: Dx. Zhu et al., AMBIPOLAR DIFFUSION-COEFFICIENT AND CARRIER LIFETIME IN A COMPRESSIVELY STRAINED INGAASP MULTIPLE-QUANTUM-WELL DEVICE, Applied physics letters, 71(5), 1997, pp. 647-649

GAN GROWTH ON SI(111) SUBSTRATE USING OXIDIZED ALAS AS AN INTERMEDIATE LAYER

Authors: KOBAYASHI NP KOBAYASHI JT DAPKUS PD CHOI WJ BOND AE ZHANG X RICH DH

Citation: Np. Kobayashi et al., GAN GROWTH ON SI(111) SUBSTRATE USING OXIDIZED ALAS AS AN INTERMEDIATE LAYER, Applied physics letters, 71(24), 1997, pp. 3569-3571

SPATIALLY SELECTIVE DISORDERING OF INGAAS GAAS QUANTUM-WELLS USING ANALAS NATIVE-OXIDE AND THERMAL ANNEALING TECHNIQUE/

Authors: LIN CK ZHANG XG DAPKUS PD RICH DH

Citation: Ck. Lin et al., SPATIALLY SELECTIVE DISORDERING OF INGAAS GAAS QUANTUM-WELLS USING ANALAS NATIVE-OXIDE AND THERMAL ANNEALING TECHNIQUE/, Applied physics letters, 71(21), 1997, pp. 3108-3110

NONCOLLINEAR 4-WAVE-MIXING IN A BROAD AREA SEMICONDUCTOR OPTICAL AMPLIFIER

Authors: ZHU DX DUBOVITSKY S STEIER WH UPPAL K TISHININ D BURGER J DAPKUS PD

Citation: Dx. Zhu et al., NONCOLLINEAR 4-WAVE-MIXING IN A BROAD AREA SEMICONDUCTOR OPTICAL AMPLIFIER, Applied physics letters, 70(16), 1997, pp. 2082-2084

Risultati: 1-25 | 26-50 | 51-64