Citation: Me. Day et M. Delfino, ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING OF NATIVE TIO2 ON TIN, Journal of the Electrochemical Society, 143(1), 1996, pp. 264-266
Citation: Me. Day et al., CORRELATION OF ELECTRICAL-RESISTIVITY AND GRAIN-SIZE IN SPUTTERED TITANIUM FILMS, Thin solid films, 254(1-2), 1995, pp. 285-290
Citation: Cw. Nam et al., SILICON SURFACE ELECTRICAL-PROPERTIES AFTER LOW-TEMPERATURE IN-SITU CLEANING USING AN ELECTRON-CYCLOTRON-RESONANCE PLASMA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(5), 1994, pp. 3010-3015
Citation: W. Tsai et al., EFFECT OF ELECTRON-CYCLOTRON-RESONANCE H+, NE+, AR+, AND XE+ PLASMA PRECLEANING ON TITANIUM SILICIDE FORMATION, I.E.E.E. transactions on electron devices, 41(8), 1994, pp. 1396-1404
Authors:
TSAI W
DELFINO M
DAY ME
SHENG T
CHUNG BC
SALIMIAN S
Citation: W. Tsai et al., CORRELATION OF PLASMA AND SURFACE-CHEMISTRY DURING ELECTRON-CYCLOTRON-RESONANCE HYDROGEN ETCHING OF NATIVE SILICON-OXIDE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(5), 1993, pp. 2525-2529
Citation: Me. Day et al., STUDY OF SILICON SURFACES BOMBARDED WITH NOBLE-GAS IONS IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA, Journal of applied physics, 74(8), 1993, pp. 5217-5224