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Results: 1-10 |
Results: 10
DIFFUSION MODELING OF ZINC IMPLANTED INTO GAAS
Authors: CHASE MP DEAL MD PLUMMER JD
Citation: Mp. Chase et al., DIFFUSION MODELING OF ZINC IMPLANTED INTO GAAS, Journal of applied physics, 81(4), 1997, pp. 1670-1676
LOCALIZED IMPURITY-INDUCED LAYER DISORDERING FOR LITHOGRAPHIC CONTROLOF THE LATERAL OXIDATION OF ALAS
Authors: MASSENGALE AR UEDA T HARRIS JS TAI CY DEAL MD PLUMMER JD FERNANDEZ R
Citation: Ar. Massengale et al., LOCALIZED IMPURITY-INDUCED LAYER DISORDERING FOR LITHOGRAPHIC CONTROLOF THE LATERAL OXIDATION OF ALAS, Electronics Letters, 33(12), 1997, pp. 1087-1089
EFFECT OF ENCAPSULANT MATERIAL ON THE DIFFUSION OF BERYLLIUM IN MOLECULAR-BEAM EPITAXY GALLIUM-ARSENIDE
Authors: HADDARA YM DEAL MD BRAVMAN JC
Citation: Ym. Haddara et al., EFFECT OF ENCAPSULANT MATERIAL ON THE DIFFUSION OF BERYLLIUM IN MOLECULAR-BEAM EPITAXY GALLIUM-ARSENIDE, Applied physics letters, 68(14), 1996, pp. 1939-1941
MODELING DIFFUSION IN GALLIUM-ARSENIDE - RECENT WORK
Authors: HADDARA YM LEE CC HU JC DEAL MD BRAVMAN JC
Citation: Ym. Haddara et al., MODELING DIFFUSION IN GALLIUM-ARSENIDE - RECENT WORK, MRS bulletin, 20(4), 1995, pp. 41-50
MODELING THE DIFFUSION OF GROWN-IN BE IN MOLECULAR-BEAM EPITAXY GAAS
Authors: HU JC DEAL MD PLUMMER JD
Citation: Jc. Hu et al., MODELING THE DIFFUSION OF GROWN-IN BE IN MOLECULAR-BEAM EPITAXY GAAS, Journal of applied physics, 78(3), 1995, pp. 1595-1605
MODELING THE DIFFUSION OF IMPLANTED BE IN GAAS
Authors: HU JC DEAL MD PLUMMER JD
Citation: Jc. Hu et al., MODELING THE DIFFUSION OF IMPLANTED BE IN GAAS, Journal of applied physics, 78(3), 1995, pp. 1606-1613
DIFFUSION OF IMPLANTED BE IN ALXGA1-XAS AS A FUNCTION OF AL CONCENTRATION AND ANNEAL TEMPERATURE
Authors: LEE CC DEAL MD BRAVMAN JC
Citation: Cc. Lee et al., DIFFUSION OF IMPLANTED BE IN ALXGA1-XAS AS A FUNCTION OF AL CONCENTRATION AND ANNEAL TEMPERATURE, Applied physics letters, 66(3), 1995, pp. 355-357
EFFECT OF IMPLANT TEMPERATURE ON DOPANT DIFFUSION AND DEFECT MORPHOLOGY FOR SI IMPLANTED GAAS
Authors: ROBINSON HG HAYNES TE ALLEN EL LEE CC DEAL MD JONES KS
Citation: Hg. Robinson et al., EFFECT OF IMPLANT TEMPERATURE ON DOPANT DIFFUSION AND DEFECT MORPHOLOGY FOR SI IMPLANTED GAAS, Journal of applied physics, 76(8), 1994, pp. 4571-4575
EFFECT OF ION ENERGY ON THE DIFFUSION OF SI IMPLANTED INTO GAAS
Authors: LEE CC DEAL MD JONES KS ROBINSON HG BRAVMAN JC
Citation: Cc. Lee et al., EFFECT OF ION ENERGY ON THE DIFFUSION OF SI IMPLANTED INTO GAAS, Journal of the Electrochemical Society, 141(8), 1994, pp. 2245-2249
ELIMINATING DOPANT DIFFUSION AFTER ION-IMPLANTATION BY SURFACE ETCHING
Authors: LEE CC DEAL MD BRAVMAN J
Citation: Cc. Lee et al., ELIMINATING DOPANT DIFFUSION AFTER ION-IMPLANTATION BY SURFACE ETCHING, Applied physics letters, 64(24), 1994, pp. 3302-3304
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