Authors: ASSOUS M DEBERRANGER E REGOLINI JL MOUIS M HERNANDEZ C

Citation: M. Assous et al., SUPPRESSION OF THE BASE-COLLECTOR LEAKAGE CURRENT IN INTEGRATED SI SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1740-1744

Authors: FORNARA P DENORME S DEBERRANGER E MATHIOT D MOUIS M PONCET A

Citation: P. Fornara et al., ACCURATE 2-DIMENSIONAL MODELING OF THE TITANIUM SILICIDE PROCESS WITHAN APPLICATION TO A THIN BASE N-P-N BIPOLAR-TRANSISTOR, Microelectronics, 29(3), 1998, pp. 71-81

Authors: BODNAR S DEBERRANGER E BOUILLON P MOUIS M SKOTNICKI T REGOLINI JL

Citation: S. Bodnar et al., SELECTIVE SI AND SIGE EPITAXIAL HETEROSTRUCTURES GROWN USING AN INDUSTRIAL LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION MODULE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 712-718

Authors: DEBERRANGER E BODNAR S CHANTRE A KIRTSCH J MONROY A GRANIER A LAURENS M REGOLINI JL MOUIS M

Citation: E. Deberranger et al., INTEGRATION OF SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS IN A 200 MM INDUSTRIAL BICMOS TECHNOLOGY, Thin solid films, 294(1-2), 1997, pp. 250-253