SELECTIVE SI AND SIGE EPITAXIAL HETEROSTRUCTURES GROWN USING AN INDUSTRIAL LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION MODULE

Low-temperature epitaxial growth of Si and Si1-xGex (referred to as Si Ge, hereafter) has been obtained using an industrial, 200 mm, single w afer chemical vapor deposition module operating at reduced pressure. E pitaxial Si and heteroepitaxial SiGe deposition with Ge content less t han or equal to 30% have been studied for buried channel applications in (PMOSFET) devices or as base for heterojunction bipolar transistors (HBTs). The dependence of Si and SiGe deposition rates on filling rat io and exposed windows and their evolution with the addition of HCl to the gas mixture are investigated. In contrast to selective Si growth where the global loading effect decreases slowly with temperature, the growth rate of SiGe at low temperature is strongly dependent on the o xide coverage. The addition of HCl into the gas mixture allows minimiz ing the dependence of the SiGe growth rate on both oxide coverage and window size. The effect of the addition of HCl on Ge and dopants incor poration is investigated on bare and/or device wafers. Results on face t formation and orientations are also presented for selective Si and S iGe growths. Finally, we report basic electrical results on selective Si epitaxial and SiGe heteroepitaxial structures, which have been inte grated in PMOSFET and HBT devices. (C) 1997 American Vacuum Society.