Citation: I. Debusschere et al., IMPORTANCE OF DETERMINING THE POLYSILICON DOPANT PROFILE DURING PROCESS-DEVELOPMENT, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 265-271
Authors:
HEIJNE EHM
ANTINORI F
BEKER H
BATIGNANI G
BEUSCH W
BONVICINI V
BOSISIO L
BOUTONNET C
BURGER P
CAMPBELL M
CANTONI P
CATANESI MG
CHESI E
CLAEYS C
CLEMENS JC
SOLAL MC
DARBO G
DAVIA C
DEBUSSCHERE I
DELPIERRE P
DIBARI D
DILIBERTO S
DIERICKX B
ENZ CC
FOCARDI E
FORTI F
GALLY Y
GLASER M
GYS T
HABRARD MC
HALLEWELL G
HERMANS L
HEUSER J
HURST R
INZANI P
JAEGER JJ
JARRON P
KARTTAAVI T
KERSTEN S
KRUMMENACHER F
LEITNER R
LEMEILLEUR F
LENTI V
LETHEREN M
LOKAJICEK M
LOUKAS D
MACDERMOTT M
MAGGI G
MANZARI V
MARTINENGO P
MEDDELER G
MEDDI F
MEKKAOUI A
MENTREY A
MIDDELKAMP P
MORANDO M
MUNNS A
MUSICO P
NAVA P
NAVACH F
NEYER C
PELLEGRINI F
PENGG F
PEREGO R
PINDO M
POSPISIL S
POTHEAU R
QUERCIGH E
REDAELLI N
RIDKY J
ROSSI L
SAUVAGE D
SEGATO G
SIMONE S
SOPKO B
STEFANINI G
STRAKOS V
TEMPESTA P
TONELLI G
VEGNI G
VERWEIJ H
VIERTEL GM
VRBA V
WAISBARD J
Citation: Ehm. Heijne et al., DEVELOPMENT OF SILICON MICROPATTERN PIXEL DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 348(2-3), 1994, pp. 399-408
Authors:
DIERICKX B
WOUTERS D
WILLEMS G
ALAERTS A
DEBUSSCHERE I
SIMOEN E
VLUMMENS J
AKIMOTO H
CLAEYS C
MAES H
HERMANS L
HEIJNE EHM
JARRON P
ANGHINOLFI F
CAMPBELL M
PENGG FX
ASPELL P
BOSISIO L
FOCARDI E
FORTI F
KASHIGIN S
MEKKAOUI A
HABRARD MC
SAUVAGE D
DELPIERRE P
Citation: B. Dierickx et al., INTEGRATION OF CMOS-ELECTRONICS AND PARTICLE DETECTOR DIODES IN HIGH-RESISTIVITY SILICON-ON-INSULATOR WAFERS, IEEE transactions on nuclear science, 40(4), 1993, pp. 753-758