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Results: 1-25 | 26-32 |
Results: 26-32/32
AMORPHOUS SILICON SILICON CARBIDE PHOTODIODES WITH EXCELLENT SENSITIVITY AND SELECTIVITY IN THE VACUUM-ULTRAVIOLET SPECTRUM/
Authors: DECESARE G IRRERA F PALMA F TUCCI M JANNITTI E NALETTO G NICOLOSI P
Citation: G. Decesare et al., AMORPHOUS SILICON SILICON CARBIDE PHOTODIODES WITH EXCELLENT SENSITIVITY AND SELECTIVITY IN THE VACUUM-ULTRAVIOLET SPECTRUM/, Applied physics letters, 67(3), 1995, pp. 335-337
AMORPHOUS SI SIC 3-COLOR DETECTOR WITH ADJUSTABLE THRESHOLD/
Authors: DECESARE G IRRERA F LEMMI F PALMA F
Citation: G. Decesare et al., AMORPHOUS SI SIC 3-COLOR DETECTOR WITH ADJUSTABLE THRESHOLD/, Applied physics letters, 66(10), 1995, pp. 1178-1180
A SYSTEMATIC INVESTIGATION OF THE ROLE OF MATERIAL PARAMETERS IN METASTABILITY OF HYDROGENATED AMORPHOUS-SILICON
Authors: CAPUTO D DECESARE G IRRERA F PALMA F ROSSI MC CONTE G NOBILE G FAMELI G
Citation: D. Caputo et al., A SYSTEMATIC INVESTIGATION OF THE ROLE OF MATERIAL PARAMETERS IN METASTABILITY OF HYDROGENATED AMORPHOUS-SILICON, Journal of non-crystalline solids, 170(3), 1994, pp. 278-286
CHARACTERIZATION OF INTRINSIC A-SI-H IN P-I-N DEVICES BY CAPACITANCE MEASUREMENTS - THEORY AND EXPERIMENTS
Authors: CAPUTO D DECESARE G IRRERA F PALMA F TUCCI M
Citation: D. Caputo et al., CHARACTERIZATION OF INTRINSIC A-SI-H IN P-I-N DEVICES BY CAPACITANCE MEASUREMENTS - THEORY AND EXPERIMENTS, Journal of applied physics, 76(6), 1994, pp. 3534-3541
ANISOTROPY OF POROUS ANODIZATION OF ALUMINUM FOR VLSI TECHNOLOGY
Authors: LAZAROUK S BARANOV I MAIELLO G PROVERBIO E DECESARE G FERRARI A
Citation: S. Lazarouk et al., ANISOTROPY OF POROUS ANODIZATION OF ALUMINUM FOR VLSI TECHNOLOGY, Journal of the Electrochemical Society, 141(9), 1994, pp. 2556-2559
2-DIMENSIONAL IMAGE SENSORS BASED ON AMORPHOUS-SILICON ALLOY P-I-N-DIODES
Authors: DECESARE G DIROSA P LAMONICA S SALOTTI R SCHIRONE L SAGGIO G VERONA E
Citation: G. Decesare et al., 2-DIMENSIONAL IMAGE SENSORS BASED ON AMORPHOUS-SILICON ALLOY P-I-N-DIODES, Journal of non-crystalline solids, 166, 1993, pp. 789-792
DESIGN, REALIZATION AND CHARACTERIZATION OF MESA INSULATED A-SI BULK BARRIER PHOTOTRANSISTOR
Authors: MASINI G CAPUTO D DECESARE G DOBOSZ A PALMA F
Citation: G. Masini et al., DESIGN, REALIZATION AND CHARACTERIZATION OF MESA INSULATED A-SI BULK BARRIER PHOTOTRANSISTOR, Journal of non-crystalline solids, 166, 1993, pp. 805-808
Risultati: 1-25 | 26-32 |