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Results:
1-7
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Results: 7
Authors:
DENTEL D
KUBLER L
BISCHOFF JL
CHATTOPADHYAY S
BERA LK
RAY SK
MAITI CK
Citation: D. Dentel et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED SI1-XGEX LAYERS ON GRADEDSI1-YGEY FOR PT SILICIDE SCHOTTKY DIODES, Semiconductor science and technology, 13(2), 1998, pp. 214-219
Authors:
ROMEO M
UHLAQBOUILLET C
DEVILLE JP
WERCKMANN J
EHRET G
CHELLY R
DENTEL D
ANGOT T
BISCHOFF JL
Citation: M. Romeo et al., HRTEM STUDY OF STRAINED SI GE MULTILAYERS, Thin solid films, 319(1-2), 1998, pp. 168-171
Authors:
BISCHOFF JL
DENTEL D
KUBLER L
Citation: Jl. Bischoff et al., 6H-SIC(0001) X-RAY PHOTOELECTRON DIFFRACTION CHARACTERIZATION USED FOR POLARITY DETERMINATION, Surface science, 415(3), 1998, pp. 392-402
Authors:
DENTEL D
BISCHOFF JL
ANGOT T
KUBLER L
Citation: D. Dentel et al., THE INFLUENCE OF HYDROGEN DURING THE GROWTH OF GE FILMS ON SI(001) BYSOLID SOURCE MOLECULAR-BEAM EPITAXY, Surface science, 404(1-3), 1998, pp. 211-214
Authors:
DENTEL D
BISCHOFF JJ
BOLMONT D
KUBLER L
Citation: D. Dentel et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING SI GROWTH ON GE(001) BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, Surface science, 404(1-3), 1998, pp. 304-307
Authors:
DENTEL D
BISCHOFF JL
KUBLER L
WERCKMANN J
ROMEO M
Citation: D. Dentel et al., SURFACE SMOOTHING INDUCED BY EPITAXIAL SI CAPPING OF ROUGH AND STRAINED GE OR SI1-XGEX MORPHOLOGIES - A RHEED AND TEM STUDY, Journal of crystal growth, 191(4), 1998, pp. 697-710
Authors:
KUBLER L
DENTEL D
BISCHOFF JL
GHICA C
ULHAQBOUILLET C
WERCKMANN J
Citation: L. Kubler et al., SI ADATOM SURFACE MIGRATION BIASING BY ELASTIC STRAIN GRADIENTS DURING CAPPING OF GE OR SI1-XGEX HUT ISLANDS, Applied physics letters, 73(8), 1998, pp. 1053-1055
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1-7
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