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Results: 1-8 |
Results: 8
SELECTIVE EPITAXIAL-GROWTH OF SI1-XGEX SI STRAINED-LAYERS IN A TUBULAR HOT-WALL LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION SYSTEM/
Authors: WANG WC DENTON JP NEUDECK GW LEE IM TAKOUDIS CG KOH MTK KVAM EP
Citation: Wc. Wang et al., SELECTIVE EPITAXIAL-GROWTH OF SI1-XGEX SI STRAINED-LAYERS IN A TUBULAR HOT-WALL LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION SYSTEM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 138-141
STACKING-FAULT REDUCTION IN SILICON-ON-INSULATOR (SOI) ISLANDS PRODUCED BY SELECTIVE EPITAXIAL-GROWTH (SEG) OF SILICON USING A THERMALLY NITRIDED SIO2 FIELD INSULATOR
Authors: NEUDECK GW MERRITT KD DENTON JP
Citation: Gw. Neudeck et al., STACKING-FAULT REDUCTION IN SILICON-ON-INSULATOR (SOI) ISLANDS PRODUCED BY SELECTIVE EPITAXIAL-GROWTH (SEG) OF SILICON USING A THERMALLY NITRIDED SIO2 FIELD INSULATOR, Microelectronic engineering, 36(1-4), 1997, pp. 391-394
PROCESS IMPROVEMENTS IN THE SELECTIVE EPITAXIAL-GROWTH OF SI1-XGEX SISTRAINED LAYERS IN A CONVENTIONAL HOT-WALL LPCVD SYSTEM/
Authors: LEE IM TAKOUDIS CG WANG WC DENTON JP NEUDECK GW KOH MTK KVAM EP
Citation: Im. Lee et al., PROCESS IMPROVEMENTS IN THE SELECTIVE EPITAXIAL-GROWTH OF SI1-XGEX SISTRAINED LAYERS IN A CONVENTIONAL HOT-WALL LPCVD SYSTEM/, Journal of the Electrochemical Society, 144(3), 1997, pp. 1095-1099
ELIMINATION OF THE SIDEWALL DEFECTS IN SELECTIVE EPITAXIAL-GROWTH (SEG) OF SILICON FOR A DIELECTRIC ISOLATION TECHNOLOGY
Authors: SHERMAN JM NEUDECK GW DENTON JP BASHIR R FULTZ WW
Citation: Jm. Sherman et al., ELIMINATION OF THE SIDEWALL DEFECTS IN SELECTIVE EPITAXIAL-GROWTH (SEG) OF SILICON FOR A DIELECTRIC ISOLATION TECHNOLOGY, IEEE electron device letters, 17(6), 1996, pp. 267-269
FULLY DEPLETED DUAL-GATED THIN-FILM SOI P-MOSFETS FABRICATED IN SOI ISLANDS WITH AN ISOLATED BURIED POLYSILICON BACKGATE
Authors: DENTON JP NEUDECK GW
Citation: Jp. Denton et Gw. Neudeck, FULLY DEPLETED DUAL-GATED THIN-FILM SOI P-MOSFETS FABRICATED IN SOI ISLANDS WITH AN ISOLATED BURIED POLYSILICON BACKGATE, IEEE electron device letters, 17(11), 1996, pp. 509-511
PRECISION CRYSTAL CORNER CUBE ARRAYS FOR OPTICAL GRATINGS FORMED BY (100)SILICON PLANES WITH SELECTIVE EPITAXIAL-GROWTH
Authors: NEUDECK GW SPITZ J CHANG JCH DENTON JP GALLAGHER N
Citation: Gw. Neudeck et al., PRECISION CRYSTAL CORNER CUBE ARRAYS FOR OPTICAL GRATINGS FORMED BY (100)SILICON PLANES WITH SELECTIVE EPITAXIAL-GROWTH, Applied optics, 35(19), 1996, pp. 3466-3470
CHARACTERIZATION OF SIDEWALL DEFECTS IN SELECTIVE EPITAXIAL-GROWTH OFSILICON
Authors: BASHIR R NEUDECK GW HAW Y KVAM EP DENTON JP
Citation: R. Bashir et al., CHARACTERIZATION OF SIDEWALL DEFECTS IN SELECTIVE EPITAXIAL-GROWTH OFSILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 923-927
DEGRADATION OF INSULATORS IN SILICON SELECTIVE EPITAXIAL-GROWTH (SEG)AMBIENT
Authors: BASHIR R KIM S QADRI N JIN D NEUDECK GW DENTON JP YERIC G WU K TASCH A
Citation: R. Bashir et al., DEGRADATION OF INSULATORS IN SILICON SELECTIVE EPITAXIAL-GROWTH (SEG)AMBIENT, IEEE electron device letters, 16(9), 1995, pp. 382-384
Risultati: 1-8 |