CHARACTERIZATION OF SIDEWALL DEFECTS IN SELECTIVE EPITAXIAL-GROWTH OFSILICON

Authors
BASHIR R NEUDECK GW HAW Y KVAM EP DENTON JP
Citation
R. Bashir et al., CHARACTERIZATION OF SIDEWALL DEFECTS IN SELECTIVE EPITAXIAL-GROWTH OFSILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 923-927
Citations number
14
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
3
Year of publication
1995
Pages
923 - 927
Database
ISI
SICI code
1071-1023(1995)13:3<923:COSDIS>2.0.ZU;2-6