Authors: FOURCHES N ORSIER E DEPONTCHARRA JD TRUCHE R

Citation: N. Fourches et al., DESIGN AND TEST OF ELEMENTARY DIGITAL CIRCUITS BASED ON MONOLITHIC SOI JFETS, IEEE transactions on nuclear science, 45(1), 1998, pp. 41-49

Authors: FOURCHES N ABBON P CHIPAUX R DELAGNES E ORSIER E PAILLER P DEPONTCHARRA JD ROUGER M SUEUR M TRUCHE R

Citation: N. Fourches et al., THICK-FILM SOI TECHNOLOGY - CHARACTERISTICS OF DEVICES AND PERFORMANCE OF CIRCUITS FOR HIGH-ENERGY PHYSICS AT CRYOGENIC TEMPERATURES - EFFECTS OF IONIZING-RADIATION, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 401(2-3), 1997, pp. 229-237

Authors: DELEONIBUS S MARTIN F DEPONTCHARRA JD TEDESCO S

Citation: S. Deleonibus et al., EXPLORATION OF LOCOS-TYPE ISOLATION LIMIT USING SUPERSILO ISOLATION BY RAPID THERMAL NITRIDATION OF SILICON, Journal of the Electrochemical Society, 140(10), 1993, pp. 2908-2916