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Results: 3
EFFECT OF IMPLANTATION OXIDE ON THE TI-SILICIDATION AND CO-SILICIDATION OF NARROW DIFFUSION AND POLY-LINES
Authors: LAUWERS A NAEM A DEPOTTER M MAEX K
Citation: A. Lauwers et al., EFFECT OF IMPLANTATION OXIDE ON THE TI-SILICIDATION AND CO-SILICIDATION OF NARROW DIFFUSION AND POLY-LINES, Thin solid films, 320(1), 1998, pp. 122-127
INFLUENCE OF CH4 H-2 REACTIVE ION ETCHING ON THE DEEP LEVELS OF SI-DOPED ALXGA1-XAS (X=0.25)/
Authors: PEREIRA RG VANHOVE M DEPOTTER M VANROSSUM M
Citation: Rg. Pereira et al., INFLUENCE OF CH4 H-2 REACTIVE ION ETCHING ON THE DEEP LEVELS OF SI-DOPED ALXGA1-XAS (X=0.25)/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1773-1779
HIGHLY UNIFORM E D MESFETS BY SI ION-IMPLANTATION AND METHANE HYDROGEN PLASMA GATE RECESSING/
Authors: ZOU G PEREIRA R DEPOTTER M VANHOVE M DERAEDT W VANROSSUM M
Citation: G. Zou et al., HIGHLY UNIFORM E D MESFETS BY SI ION-IMPLANTATION AND METHANE HYDROGEN PLASMA GATE RECESSING/, Semiconductor science and technology, 6(9), 1991, pp. 912-915
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