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Citation: W. Hartner et al., ROLE OF RECOVERY ANNEALS FOR CHEMICAL SOLUTION DEPOSITION (CSD) BASEDSRBI2TA2O9 (SBT) THIN-FILMS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 543-553

Authors: JOSHI V SOLAYAPPAN N HARTNER W SCHINDLER G DEHM C MAZURE C DERBENWICK G

Citation: V. Joshi et al., THE ROLE OF RAPID THERMAL-PROCESSING IN CRYSTALLIZATION OF SBT THIN-FILMS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 595-601

Authors: GROSSMANN M LOHSE O BOLTEN D WASER R HARTNER W SCHINDLER G DEHM C NAGEL N JOSHI V SOLAYAPPAN N DERBENWICK G

Citation: M. Grossmann et al., IMPRINT IN FERROELECTRIC SRBI2TA2O9 CAPACITORS FOR NONVOLATILE MEMORYAPPLICATIONS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 615-627

Authors: SCHINDLER G HARTNER W JOSHI V SOLAYAPPAN N DERBENWICK G MAZURE C

Citation: G. Schindler et al., INFLUENCE OF TI-CONTENT IN THE BOTTOM ELECTRODES ON THE FERROELECTRICPROPERTIES OF SRBI2TA2O9 (SBT), Integrated ferroelectrics, 17(1-4), 1997, pp. 421-432