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Results: 1-8 |
Results: 8
XS-MET - A REDUCED COMPLEXITY FABRICATION PROCESS USING COMPLEMENTARYHETEROSTRUCTURE FIELD-EFFECT TRANSISTORS FOR ANALOG, LOW-POWER, SPACEAPPLICATIONS
Authors: CERNY CL VIA GD EBEL JL DESALVO GC QUACH TK BOZADA CA DETTMER RW GILLESPIE JK JENKINS TJ PETTIFORD CI SEWELL JS EHRET JE MERKEL K WILSON A LYKE J
Citation: Cl. Cerny et al., XS-MET - A REDUCED COMPLEXITY FABRICATION PROCESS USING COMPLEMENTARYHETEROSTRUCTURE FIELD-EFFECT TRANSISTORS FOR ANALOG, LOW-POWER, SPACEAPPLICATIONS, IEEE aerospace and electronic systems magazine, 13(3), 1998, pp. 7-14
DEPTH MEASUREMENT OF DOPED SEMICONDUCTORS USING THE HALL TECHNIQUE
Authors: DESALVO GC LOOK DC BOZADA CA EBEL JL
Citation: Gc. Desalvo et al., DEPTH MEASUREMENT OF DOPED SEMICONDUCTORS USING THE HALL TECHNIQUE, Journal of applied physics, 81(1), 1997, pp. 281-284
EFFECTS OF IN PROFILE ON MATERIAL AND DEVICE PROPERTIES OF ALGAAS INGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/
Authors: LOOK DC JOGAI B KASPI R EBEL JL EVANS KR JONES RL NAKANO K SHERRIFF RE STULZ CE DESALVO GC ITO C
Citation: Dc. Look et al., EFFECTS OF IN PROFILE ON MATERIAL AND DEVICE PROPERTIES OF ALGAAS INGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Journal of applied physics, 79(1), 1996, pp. 540-544
WET CHEMICAL DIGITAL ETCHING OF GAAS AT ROOM-TEMPERATURE
Authors: DESALVO GC BOZADA CA EBEL JL LOOK DC BARRETTE JP CERNY CLA DETTMER RW GILLESPIE JK HAVASY CK JENKINS TJ NAKANO K PETTIFORD CI QUACH TK SEWELL JS VIA GD
Citation: Gc. Desalvo et al., WET CHEMICAL DIGITAL ETCHING OF GAAS AT ROOM-TEMPERATURE, Journal of the Electrochemical Society, 143(11), 1996, pp. 3652-3656
SIMPLIFIED OHMIC AND SCHOTTKY CONTACT FORMATION FOR FIELD-EFFECT TRANSISTORS USING THE SINGLE-LAYER INTEGRATED METAL FIELD-EFFECT TRANSISTOR (SLIMFET) PROCESS
Authors: DESALVO GC QUACH TK BOZADA CA DETTMER RW NAKANO K GILLESPIE JK VIA GD EBEL JL HAVASY CK
Citation: Gc. Desalvo et al., SIMPLIFIED OHMIC AND SCHOTTKY CONTACT FORMATION FOR FIELD-EFFECT TRANSISTORS USING THE SINGLE-LAYER INTEGRATED METAL FIELD-EFFECT TRANSISTOR (SLIMFET) PROCESS, IEEE transactions on semiconductor manufacturing, 8(3), 1995, pp. 314-318
MAGNETO-HALL CHARACTERIZATION OF DELTA-DOPED PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES
Authors: LOOK DC JOGAI B STUTZ CE SHERRIFF RE DESALVO GC ROGERS TJ BALLINGALL JM
Citation: Dc. Look et al., MAGNETO-HALL CHARACTERIZATION OF DELTA-DOPED PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES, Journal of applied physics, 76(1), 1994, pp. 328-331
CITRIC-ACID ETCHING OF GAAS1-XSBX, AL0.5GA0.5SB, AND INAS FOR HETEROSTRUCTURE DEVICE FABRICATION
Authors: DESALVO GC KASPI R BOZADA CA
Citation: Gc. Desalvo et al., CITRIC-ACID ETCHING OF GAAS1-XSBX, AL0.5GA0.5SB, AND INAS FOR HETEROSTRUCTURE DEVICE FABRICATION, Journal of the Electrochemical Society, 141(12), 1994, pp. 3526-3531
ULTRATHIN DELTA-DOPED GAAS AND ALAS TUNNEL-JUNCTIONS AS INTERDEVICE OHMIC CONTACTS
Authors: DESALVO GC
Citation: Gc. Desalvo, ULTRATHIN DELTA-DOPED GAAS AND ALAS TUNNEL-JUNCTIONS AS INTERDEVICE OHMIC CONTACTS, Journal of applied physics, 74(6), 1993, pp. 4207-4212
Risultati: 1-8 |