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Results:
1-15
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Results: 15
Authors:
PAVLOVIC M
DESNICA UV
Citation: M. Pavlovic et Uv. Desnica, IMPROVEMENT IN SEMIINSULATING GAAS MATERIAL QUALITY - A COMPARATIVE-STUDY OF DEFECTS WITH DEEP LEVELS, JPN J A P 1, 37(9A), 1998, pp. 4687-4694
Authors:
DESNICA UV
Citation: Uv. Desnica, WIDE BAND-GAP II-VI COMPOUNDS - CAN EFFICIENT DOPING BE ACHIEVED, Vacuum, 50(3-4), 1998, pp. 463-471
Authors:
GAMULIN O
IVANDA M
DESNICA UV
FURIC K
Citation: O. Gamulin et al., STRUCTURAL RELAXATION OF AMORPHOUS-SILICON DURING THERMAL AND CW LASER ANNEALING, Journal of non-crystalline solids, 230, 1998, pp. 943-948
Authors:
PAVLOVIC M
DESNICA UV
Citation: M. Pavlovic et Uv. Desnica, PRECISE DETERMINATION OF DEEP TRAP SIGNATURES AND THEIR RELATIVE AND ABSOLUTE CONCENTRATIONS IN SEMIINSULATING GAAS, Journal of applied physics, 84(4), 1998, pp. 2018-2024
Authors:
DESNICA UV
DESNICAFRANKOVIC ID
IVANDA M
FURIC K
HAYNES TE
Citation: Uv. Desnica et al., MORPHOLOGY OF THE IMPLANTATION-INDUCED DISORDER IN GAAS STUDIED BY RAMAN-SPECTROSCOPY AND ION CHANNELING, Physical review. B, Condensed matter, 55(24), 1997, pp. 16205-16216
Authors:
GAMULIN O
IVANDA M
DESNICA UV
FURIC K
Citation: O. Gamulin et al., COMPARISON OF STRUCTURAL-CHANGES IN AMORPHOUS-SILICON INDUCED BY THERMAL AND CW LASER ANNEALING, Journal of molecular structure, 410, 1997, pp. 249-252
Authors:
PAVLOVIC M
DESNICA UV
RADIC N
SANTIC B
Citation: M. Pavlovic et al., DEFECTS WITH DEEP LEVELS AND THEIR IMPACT ON OPTICAL-ABSORPTION OF SEMIINSULATING GAAS, Strojarstvo, 38(6), 1996, pp. 257-260
Authors:
SANTIC B
RADIC N
DESNICA UV
FILLARD JP
Citation: B. Santic et al., ANALYSIS OF TRANSIENT PHENOMENA IN GAAS WITHIN THE METASTABLE MODEL, Physica status solidi. b, Basic research, 195(2), 1996, pp. 465-474
Authors:
DESNICA UV
DESNICA ID
IVANDA M
HAYNES TE
Citation: Uv. Desnica et al., MORPHOLOGY OF THE IMPLANTATION-INDUCED DISORDER IN GAAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 236-239
Authors:
RADIC N
SANTIC B
DESNICA UV
Citation: N. Radic et al., EL2 DEFECT METASTABILITY-RELATED TRANSIENTS REVISITED, JPN J A P 1, 34(11), 1995, pp. 5922-5925
Authors:
GRACIN D
RADIC N
DESNICA UV
Citation: D. Gracin et al., MICROSTRUCTURAL PROPERTIES OF AMORPHOUS-SILICON ALLOYS DEPOSITED BY DC MAGNETRON SOURCE, Vacuum, 46(8-10), 1995, pp. 943-946
Authors:
PAVLOVIC M
SANTIC B
DESNICA UV
Citation: M. Pavlovic et al., A COMPARATIVE-STUDY OF DEEP LEVELS IN UNDOPED SEMIINSULATING GALLIUM-ARSENIDE WAFERS USING THERMALLY STIMULATED CURRENT SPECTRA, Journal of physics. D, Applied physics, 28(5), 1995, pp. 934-938
Authors:
IVANDA M
DESNICA UV
HAYNES TE
HARTMANN I
KIEFER W
Citation: M. Ivanda et al., RAMAN-STUDY OF DAMAGE PROCESSES IN SI-IMPLANTED GAAS(), Journal of molecular structure, 348, 1995, pp. 33-36
Authors:
GRACIN D
IVANDA M
LUGOMER S
DESNICA UV
RADIC N
Citation: D. Gracin et al., MICROSTRUCTURAL PROPERTIES OF DC MAGNETRON-SPUTTERED A-SI-H AND A-SI1-XCX-H, Applied surface science, 70-1, 1993, pp. 686-690
Authors:
SANTIC B
DESNICA UV
RADIC N
DESNICA D
PAVLOVIC M
Citation: B. Santic et al., PHOTOCONDUCTIVITY TRANSIENTS AND PHOTOSENSITIZATION PHENOMENA IN SEMIINSULATING GAAS, Journal of applied physics, 73(10), 1993, pp. 5181-5184
Risultati:
1-15
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