Authors:
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RAMANATHAN S
DESU SB
STOWELL S
SENGUPTA S
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Authors:
JOSHI PC
ZHANG X
RYU SO
TIRUMALA S
DESU SB
Citation: Pc. Joshi et al., NOVEL LAYERED-STRUCTURE SOLID-SOLUTIONS FOR FERROELECTRIC RANDOM-ACCESS MEMORY DEVICES, Journal of the Korean Physical Society, 32, 1998, pp. 1468-1470
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Authors:
STOWELL S
SENGUPTA S
SENGUPTA LC
SYNOWCYZNSKI J
CHIU LH
JOSHI PC
DESU SB
Citation: S. Stowell et al., EFFECTS OF DOPANTS ON THE ELECTRONIC-PROPERTIES OF BA1-XSRXTIO3 THIN-FILMS FABRICATED BY MOSD TECHNIQUE, Journal of the Korean Physical Society, 32, 1998, pp. 1587-1590
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Citation: Tc. Chen et Sb. Desu, OPTICAL-PROPERTIES OF SRBI2(TA1-XNBX)(2)O-9 BULK CERAMICS CHARACTERIZED BY SPECTROSCOPIC ELLIPSOMETRY, Physica status solidi. a, Applied research, 167(1), 1998, pp. 215-221
Citation: Sb. Desu et al., FERROELECTRIC SRBI2TA2O9 THIN-FILMS DEPOSITED ON SI(100) BY PULSED-LASER DEPOSITION, Physica status solidi. a, Applied research, 165(1), 1998, pp. 213-217
Authors:
ONISHI S
NAGATA M
MITARAI S
ITO Y
KUDO J
SAKIYAMA K
DESU SB
BHATT HD
VIJAY DP
HWANG Y
Citation: S. Onishi et al., HIGH-TEMPERATURE BARRIER ELECTRODE TECHNOLOGY FOR HIGH-DENSITY FERROELECTRIC MEMORIES WITH STACKED CAPACITOR STRUCTURE, Journal of the Electrochemical Society, 145(7), 1998, pp. 2563-2568
Citation: Pc. Joshi et Sb. Desu, PROPERTIES OF BA(MG1 3TA2/3)O-3 THIN-FILMS PREPARED BY METALORGANIC SOLUTION DEPOSITION TECHNIQUE FOR MICROWAVE APPLICATIONS/, Applied physics letters, 73(8), 1998, pp. 1080-1082
Citation: Yj. Song et al., LOW-TEMPERATURE FABRICATION AND PROPERTIES OF SOL-GEL DERIVED (111) ORIENTED PB(ZR1-XTIX)O-3 THIN-FILMS, Applied physics letters, 72(21), 1998, pp. 2686-2688
Citation: Jj. Senkevich et Sb. Desu, POLY(TETRAFLUORO-P-XYLYLENE), A LOW DIELECTRIC-CONSTANT CHEMICAL-VAPOR POLYMERIZED POLYMER, Applied physics letters, 72(2), 1998, pp. 258-260
Citation: Yf. Zhu et al., ELECTRICAL-PROPERTIES OF FERROELECTRIC (SRBI2TA2O9)(1-X)(BI3TINBO9)(X) SOLID-SOLUTION, Journal of physics. Condensed matter, 9(46), 1997, pp. 10225-10235
Citation: Tc. Chen et al., STRUCTURE DEVELOPMENT STUDIES OF SRBI2(TA1-XNBX)(2)O-9 THIN-FILMS, Journal of materials research, 12(8), 1997, pp. 2165-2174
Citation: Tc. Chen et al., THE EFFECT OF EXCESS BISMUTH ON THE FERROELECTRIC PROPERTIES OF SRBI2TA2O9 THIN-FILMS, Journal of materials research, 12(6), 1997, pp. 1569-1575
Authors:
ZHU YF
DESU SB
LI TK
RAMANATHAN S
NAGATA M
Citation: Yf. Zhu et al., SRBI2TA2O9 THIN-FILMS MADE BY LIQUID SOURCE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of materials research, 12(3), 1997, pp. 783-792
Citation: Tc. Chen et al., IMPEDANCE SPECTROSCOPY OF SRBI2TA2O9 AND SRBI2NB2O9 CERAMICS CORRELATION WITH FATIGUE BEHAVIOR, Journal of materials research, 12(10), 1997, pp. 2628-2637
Citation: Pc. Joshi et al., MICROSTRUCTURAL AND ELECTRICAL CHARACTERISTICS OF RAPID THERMALLY PROCESSED (BA1-XSRX)TIO3 THIN-FILMS PREPARED BY METALORGANIC SOLUTION DEPOSITION TECHNIQUE, Physica status solidi. a, Applied research, 161(2), 1997, pp. 361-370
Citation: Hs. Cho et Sb. Desu, STRUCTURAL AND ELECTRICAL-PROPERTIES OF ORIENTED FERROELECTRIC CABI2NB2O9 THIN-FILMS DEPOSITED ON N(-SI(100) BY PULSED-LASER DEPOSITION()), Physica status solidi. a, Applied research, 161(2), 1997, pp. 371-378
Citation: W. Pan et Sb. Desu, REACTIVE ION ETCHING OF RUO2 FILMS - THE ROLE OF ADDITIVE GASES IN O-2 DISCHARGE, Physica status solidi. a, Applied research, 161(1), 1997, pp. 201-215