Citation: Ia. Devyatov et My. Kupriyanov, CURRENT-VOLTAGE CHARACTERISTICS OF SIS STRUCTURES WITH LOCALIZED STATES IN THE MATERIAL OF THE BARRIER LAYER, Journal of experimental and theoretical physics (Print), 87(2), 1998, pp. 375-381
Citation: Ia. Devyatov et My. Kupriyanov, RESONANT JOSEPHSON TUNNELING THROUGH S-I-S JUNCTIONS OF ARBITRARY SIZE, Journal of experimental and theoretical physics, 85(1), 1997, pp. 189-194
Citation: Ia. Devyatov et al., RESONANT JOSEPHSON CURRENT THROUGH A LONG SIS JUNCTION, IEEE transactions on applied superconductivity, 7(2), 1997, pp. 3021-3024
Citation: Ia. Devyatov et Kk. Likharev, PHOTORESPONSE AND PHOTOSENSITIVITY OF SINGLE-ELECTRON-TUNNELING SYSTEMS, Physica. B, Condensed matter, 194, 1994, pp. 1341-1342
Citation: Ia. Devyatov et My. Kupriyanov, EFFECT OF RESONANCE TUNNELING AND COLOUMB ELECTRON REPULSHION ON LOCALIZED CENTERS WITH TAKING INTO ACCOUNT VOLTAMETRIC CHARACTERISTICS OF TUNNEL NIN-STRUCTURES, SIN-STRUCTURES AND SIS-STRUCTURES, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 104(5), 1993, pp. 3897-3915