AAAAAA
Results:
1-16
|
Results: 16
Authors:
CHEN AC
ZANDIAN M
EDWALL DD
DEWAMES RE
WIJEWARNASURIYA PS
ARIAS JM
SIVANANTHAN S
BERDING M
SHER A
Citation: Ac. Chen et al., MBE GROWTH AND CHARACTERIZATION OF IN-SITU ARSENIC DOPED HGCDTE, Journal of electronic materials, 27(6), 1998, pp. 595-599
Authors:
EDWALL DD
DEWAMES RE
MCLEVIGE WV
PASKO JG
ARIAS JM
Citation: Dd. Edwall et al., MEASUREMENT OF MINORITY-CARRIER LIFETIME IN N-TYPE MBE HGCDTE AND ITSDEPENDENCE ON ANNEALING, Journal of electronic materials, 27(6), 1998, pp. 698-702
Authors:
DEWAMES RE
EDWALL DD
ZANDIAN M
BUBULAC LO
PASKO JG
TENNANT WE
ARIAS JM
DSOUZA A
Citation: Re. Dewames et al., DARK CURRENT GENERATING MECHANISMS IN SHORT-WAVELENGTH INFRARED PHOTOVOLTAIC DETECTORS, Journal of electronic materials, 27(6), 1998, pp. 722-726
Authors:
DSOUZA AI
BAJAJ J
DEWAMES RE
EDWALL DD
WIJEWARNASURIYA PS
NAYAR N
Citation: Ai. Dsouza et al., MWIR DLPH HGCDTE PHOTODIODE PERFORMANCE DEPENDENCE ON SUBSTRATE MATERIAL, Journal of electronic materials, 27(6), 1998, pp. 727-732
Authors:
BUBULAC LO
TENNANT WE
PASKO JG
KOZLOWSKI LJ
ZANDIAN M
MOTAMEDI ME
DEWAMES RE
BAJAJ J
NAYAR N
MCLEVIGE WV
GLUCK NS
MELENDES R
COOPER DE
EDWALL DD
ARIAS JM
HALL R
DSOUZA AI
Citation: Lo. Bubulac et al., HIGH-PERFORMANCE SWIR HGCDTE DETECTOR ARRAYS, Journal of electronic materials, 26(6), 1997, pp. 649-655
Authors:
BAJAJ J
ARIAS JM
ZANDIAN M
PASKO JG
KOZLOWSKI LJ
DEWAMES RE
TENNANT WE
Citation: J. Bajaj et al., MOLECULAR-BEAM EPITAXIAL HGCDTE MATERIAL CHARACTERISTICS AND DEVICE PERFORMANCE - REPRODUCIBILITY STATUS, Journal of electronic materials, 24(9), 1995, pp. 1067-1076
Authors:
ZANDIAN M
ARIAS JM
BAJAJ J
PASKO JG
BUBULAC LO
DEWAMES RE
Citation: M. Zandian et al., ORIGIN OF VOID DEFECTS IN HG1-XCDXTE GROWN BY MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 24(9), 1995, pp. 1207-1210
Authors:
WILLIAMS GM
DEWAMES RE
Citation: Gm. Williams et Re. Dewames, NUMERICAL-SIMULATION OF HGCDTE DETECTOR CHARACTERISTICS, Journal of electronic materials, 24(9), 1995, pp. 1239-1248
Authors:
ARIAS JM
ZANDIAN M
BAJAJ J
PASKO JG
BUBULAC LO
SHIN SH
DEWAMES RE
Citation: Jm. Arias et al., MOLECULAR-BEAM EPITAXY HGCDTE GROWTH-INDUCED VOID DEFECTS AND THEIR EFFECT ON INFRARED PHOTODIODES, Journal of electronic materials, 24(5), 1995, pp. 521-524
Authors:
SHIN SH
ARIAS JM
ZANDIAN M
PASKO JG
BUBULAC LO
DEWAMES RE
Citation: Sh. Shin et al., ENHANCED ARSENIC DIFFUSION AND ACTIVATION IN HGCDTE, Journal of electronic materials, 24(5), 1995, pp. 609-615
Authors:
ZANDIAN M
PASKO JG
ARIAS JM
DEWAMES RE
SHIN SH
Citation: M. Zandian et al., ROOM-TEMPERATURE CHARACTERIZATION OF HG1-XCDXTE P-ON-N HETEROSTRUCTURE PHOTODIODES, Journal of electronic materials, 24(5), 1995, pp. 681-684
Authors:
ARIAS JM
PASKO JG
ZANDIAN M
KOZLOWSKI LJ
DEWAMES RE
Citation: Jm. Arias et al., MOLECULAR-BEAM EPITAXY HGCDTE INFRARED PHOTOVOLTAIC DETECTORS, Optical engineering, 33(5), 1994, pp. 1422-1428
Authors:
WILLIAMS GM
DEWAMES RE
BAJAJ J
BLAZEJEWSKI ER
Citation: Gm. Williams et al., PHOTOINDUCED EXCESS LOW-FREQUENCY NOISE IN HGCDTE PHOTODIODES, Journal of electronic materials, 22(8), 1993, pp. 931-941
Authors:
SHIN SH
ARIAS JM
ZANDIAN M
PASKO JG
BUBULAC LO
DEWAMES RE
Citation: Sh. Shin et al., ANNEALING EFFECT ON THE P-TYPE CARRIER CONCENTRATION IN LOW-TEMPERATURE PROCESSED ARSENIC-DOPED HGCDTE, Journal of electronic materials, 22(8), 1993, pp. 1039-1047
Authors:
ARIAS JM
PASKO JG
ZANDIAN M
SHIN SH
WILLIAMS GM
BUBULAC LO
DEWAMES RE
TENNANT WE
Citation: Jm. Arias et al., MBE HGCDTE HETEROSTRUCTURE P-ON-N PLANAR INFRARED PHOTODIODES, Journal of electronic materials, 22(8), 1993, pp. 1049-1053
Authors:
MCLEVIGE WV
WILLIAMS GM
DEWAMES RE
BAJAJ J
GERGIS IS
VANDERWYCK AH
BLAZEJEWSKI ER
Citation: Wv. Mclevige et al., VARIABLE-AREA DIODE DATA-ANALYSIS OF SURFACE AND BULK EFFECTS IN MWIRHGCDTE CDTE SAPPHIRE PHOTODETECTORS, Semiconductor science and technology, 8(6), 1993, pp. 946-952
Risultati:
1-16
|