MOLECULAR-BEAM EPITAXY HGCDTE GROWTH-INDUCED VOID DEFECTS AND THEIR EFFECT ON INFRARED PHOTODIODES

Authors
ARIAS JM ZANDIAN M BAJAJ J PASKO JG BUBULAC LO SHIN SH DEWAMES RE
Citation
Jm. Arias et al., MOLECULAR-BEAM EPITAXY HGCDTE GROWTH-INDUCED VOID DEFECTS AND THEIR EFFECT ON INFRARED PHOTODIODES, Journal of electronic materials, 24(5), 1995, pp. 521-524
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
24
Issue
5
Year of publication
1995
Pages
521 - 524
Database
ISI
SICI code
0361-5235(1995)24:5<521:MEHGVD>2.0.ZU;2-Y
Abstract
We have carried out a study and identified that MBE HgCdTe growth-indu ced void defects are detrimental to long wavelength infrared photodiod e performance. These defects were induced during nucleation by having surface growth conditions deficient in Hg. Precise control and reprodu cibility of the CdZnTe surface temperature and beam lures are required to minimize such defects. Device quality material with void defect co ncentration values in the low 10(2) cm(-2) range were demonstrated.