Authors: CHENG TS HOOPER SE JENKINS LC FOXON CT LACKLISON DE DEWSNIP JD ORTON JW

Citation: Ts. Cheng et al., OPTICAL-PROPERTIES OF DOPED GAN GROWN BY A MODIFIED MOLECULAR-BEAM EPITAXIAL (MBE) PROCESS ON GAAS SUBSTRATES, Journal of crystal growth, 166(1-4), 1996, pp. 597-600