Authors: DHONDT M MOERMAN I DEMEESTER P

Citation: M. Dhondt et al., DARK CURRENT OPTIMIZATION FOR MOVPE GROWN 2.51-MU-M WAVELENGTH INGAASPHOTODETECTORS, Electronics Letters, 34(9), 1998, pp. 910-912

Authors: DHONDT M MOERMAN I VANDAELE P DEMEESTER P

Citation: M. Dhondt et al., INFLUENCE OF BUFFER LAYER AND PROCESSING ON THE DARK CURRENT OF 2.5-MU-M-WAVELENGTH 2-PERCENT-MISMATCHED INGAAS PHOTODETECTORS, IEE proceedings. Optoelectronics, 144(5), 1997, pp. 277-282

Authors: DHONDT M MOERMAN I DEMEESTER P

Citation: M. Dhondt et al., CHARACTERIZATION OF 2-PERCENT MISMATCHED INGAAS AND INASP LAYERS, GROWN ON DIFFERENT BUFFER LAYERS AND AT DIFFERENT GROWTH, Journal of crystal growth, 170(1-4), 1997, pp. 616-620

Authors: MOERMAN I DHONDT M VANDERBAUWHEDE W VANDAELE P DEMEESTER P HUNZIKER W

Citation: I. Moerman et al., INGAASP INP STRAINED MQW LASER WITH INTEGRATED-MODE SIZE CONVERTER USING THE SHADOW MASKED GROWTH TECHNIQUE/, Electronics Letters, 31(6), 1995, pp. 452-454

Authors: MOERMAN I DHONDT M VANDERBAUWHEDE W COUDENYS G HAES J DEDOBBELAERE P BAETS R VANDAELE P DEMEESTER P

Citation: I. Moerman et al., MONOLITHIC INTEGRATION OF A SPOT SIZE TRANSFORMER WITH A PLANAR BURIED HETEROSTRUCTURE IN GAASP INP-LASER USING THE SHADOW MASKED GROWTH TECHNIQUE/, IEEE photonics technology letters, 6(8), 1994, pp. 888-890

Authors: MOERMAN I VERMEIRE G DHONDT M VANDERBAUWHEDE W BLONDELLE J COUDENYS G VANDAELE P DEMEESTER P

Citation: I. Moerman et al., III-V SEMICONDUCTOR WAVE-GUIDING DEVICES USING ADIABATIC TAPERS, Microelectronics, 25(8), 1994, pp. 675-690