Authors:
FENG T
DIMOULAS A
CHRISTOU A
LAGADAS M
HATZOPOULO Z
Citation: T. Feng et al., ENHANCEMENT OF 2D GROWTH OF MBE HETEROSTRUCTURES USING LASER-ASSISTEDMBE TECHNIQUES, Thin solid films, 318(1-2), 1998, pp. 22-28
Authors:
ESSER RH
DIMOULAS A
STRIFAS N
CHRISTOU A
PAPANICOLAU N
Citation: Rh. Esser et al., MATERIALS INTERFACES IN FLIP-CHIP INTERCONNECTS FOR OPTICAL-COMPONENTS - PERFORMANCE AND DEGRADATION MECHANISMS, Microelectronics and reliability, 38(6-8), 1998, pp. 1307-1312
Authors:
FENG T
DIMOULAS A
CHRISTOU A
CONSTANTINIDIS G
HATZOPOULOS Z
Citation: T. Feng et al., FAILURE MECHANISMS OF GAAS-MESFETS WITH CU REFRACTORY METALLIZED GATES/, Microelectronics and reliability, 37(10-11), 1997, pp. 1699-1702
Authors:
DIMOULAS A
DAVIDOW J
GIAPIS KP
GEORGAKILAS A
HALKIAS G
KORNELIOS N
Citation: A. Dimoulas et al., ELECTRON-DENSITY EFFECTS IN THE MODULATION SPECTROSCOPY OF STRAINED AND LATTICE-MATCHED INGAAS INALAS/INP HIGH-ELECTRON-MOBILITY TRANSISTORSTRUCTURES/, Journal of applied physics, 80(6), 1996, pp. 3484-3487
Authors:
DIMOULAS A
HEIDA JP
VONWEES BJ
KLAPWIJK TM
VANDERGRAAF W
BORGHS G
Citation: A. Dimoulas et al., PHASE-DEPENDENT RESISTANCE IN A SUPERCONDUCTOR 2-DIMENSIONAL-ELECTRON-GAS QUASI-PARTICLE INTERFEROMETER, Physical review letters, 74(4), 1995, pp. 602-605
Authors:
VANWEES BJ
DIMOULAS A
HEIDA JP
KLAPWIJK TM
VANDERGRAAF W
BORGHS G
Citation: Bj. Vanwees et al., SUPERCURRENT TRANSPORT AND QUASI-PARTICLE INTERFERENCE IN A MESOSCOPIC 2-DIMENSIONAL ELECTRON-GAS COUPLED TO SUPERCONDUCTORS, Physica. B, Condensed matter, 203(3-4), 1994, pp. 285-290
Citation: Wz. Shen et al., OPTICAL AND TRANSPORT-PROPERTIES OF DELTA-DOPED PSEUDOMORPHIC ALGAAS INGAAS/GAAS STRUCTURES/, International journal of infrared and millimeter waves, 15(11), 1994, pp. 1809-1818
Authors:
ZEKENTES K
HALKIAS G
DIMOULAS A
TABATA A
BENYATTOU T
GUILLOT G
MORANTE JR
PEIRO F
CORNET A
GEORGAKILAS A
CHRISTOU A
Citation: K. Zekentes et al., MATERIALS PROBLEMS FOR THE DEVELOPMENT OF INGAAS INALAS HEMT TECHNOLOGY, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 21-25
Authors:
DIMOULAS A
ZEKENTES K
ANDROULIDAKI M
KORNELIOS N
MICHELAKIS C
HATZOPOULOS Z
Citation: A. Dimoulas et al., DEGENERATE ELECTRON-GAS EFFECTS IN THE MODULATION SPECTROSCOPY OF PSEUDOMORPHIC AL0.32GA0.68AS IN0.15GA0.85AS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES/, Applied physics letters, 63(10), 1993, pp. 1417-1419