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Citation: R. Divakaruni et Cr. Viswanathan, QUASI-STATIC BEHAVIOR OF MOS DEVICES IN THE FREEZE-OUT REGIME, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 87-93

Authors: DIVAKARUNI R PETERSON R NYSTROM S VISWANATHAN CR

Citation: R. Divakaruni et al., LOW-TEMPERATURE LOW-FREQUENCY NOISE IN OXIDE AND REOXIDIZED-NITRIDED OXIDE-FILMS, Journal de physique. IV, 4(C6), 1994, pp. 43-48

Authors: LI XY DIVAKARUNI R HSU JT PRABHAKAR V AUM P CHAN D VISWANATHAN CR

Citation: Xy. Li et al., EFFECT OF PLASMA POLY-ETCH ON EFFECTIVE CHANNEL-LENGTH AND HOT-CARRIER RELIABILITY IN SUBMICRON TRANSISTORS, IEEE electron device letters, 15(4), 1994, pp. 140-141

Authors: DIVAKARUNI R PRABHAKAR V VISWANATHAN CR

Citation: R. Divakaruni et al., ACTIVATION-ENERGY DETERMINATION FROM LOW-TEMPERATURE CV DISPERSION, I.E.E.E. transactions on electron devices, 41(8), 1994, pp. 1405-1413