Authors: DORGEUILLE F MERSALI B FEUILLADE M SAINSON S SLEMPKES S FOUCHER M

Citation: F. Dorgeuille et al., NOVEL-APPROACH FOR SIMPLE FABRICATION OF HIGH-PERFORMANCE INP-SWITCH MATRIX BASED ON LASER-AMPLIFIER GATES, IEEE photonics technology letters, 8(9), 1996, pp. 1178-1180

Authors: DORGEUILLE F MERSALI B FEUILLADE T SAINSON S BRANDON J SLEMPKES S CARRE M

Citation: F. Dorgeuille et al., MONOLITHIC INGAASP-INP TAPERED LASER-AMPLIFIER GATE 2X2 SWITCH MATRIXWITH GAIN, Electronics Letters, 32(7), 1996, pp. 686-688

Authors: DORGEUILLE F MERSALI B FRANCOIS S HERVEGRUYER G FILOCHE M

Citation: F. Dorgeuille et al., SPOT SIZE TRANSFORMER WITH A PERIODICALLY SEGMENTED WAVE-GUIDE BASED ON INP, Optics letters, 20(6), 1995, pp. 581-583

Authors: DORGEUILLE F DEVAUX F

Citation: F. Dorgeuille et F. Devaux, ON THE TRANSMISSION PERFORMANCES AND THE CHIRP PARAMETER OF A MULTIPLE-QUANTUM-WELL ELECTROABSORPTION MODULATOR, IEEE journal of quantum electronics, 30(11), 1994, pp. 2565-2572

Authors: DEVAUX F DORGEUILLE F OUGAZZADEN A HUET F CARRE M CARENCO A HENRY M SOREL Y KERDILES JF JEANNEY E

Citation: F. Devaux et al., 20 GBIT S OPERATION OF A HIGH-EFFICIENCY INGAASP/INGAASP MQW ELECTROABSORPTION MODULATOR WITH 1.2-V DRIVE VOLTAGE/, IEEE photonics technology letters, 5(11), 1993, pp. 1288-1290