Authors: PHATAK P NEWMAN N DRESZER P WEBER ER

Citation: P. Phatak et al., EXPERIMENTAL-DETERMINATION OF THE PRESSURE-DEPENDENCE OF THE BARRIER HEIGHT OF METAL [N-TYPE GAAS] SCHOTTKY CONTACTS - A CRITICAL TEST OF SCHOTTKY-BARRIER MODELS, Physical review. B, Condensed matter, 51(24), 1995, pp. 18003-18006

Authors: CHEN WM DRESZER P PRASAD A KURPIEWSKI A WALUKIEWICZ W WEBER ER SORMAN E MONEMAR B LIANG BW TU CW

Citation: Wm. Chen et al., ORIGIN OF N-TYPE CONDUCTIVITY OF LOW-TEMPERATURE-GROWN INP, Journal of applied physics, 76(1), 1994, pp. 600-602

Authors: CLAVERIE A NAMAVAR F LILIENTALWEBER Z DRESZER P WEBER ER

Citation: A. Claverie et al., SEMIINSULATING GAAS MADE BY AS IMPLANTATION AND THERMAL ANNEALING, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 37-40

Authors: DRESZER P CHEN WM WASIK D LEON R WALUKIEWICZ W LIANG BW TU CW WEBER ER

Citation: P. Dreszer et al., ELECTRONIC-PROPERTIES OF LOW-TEMPERATURE INP, Journal of electronic materials, 22(12), 1993, pp. 1487-1490

Authors: CHEN WM DRESZER P WEBER ER SORMAN E MONEMAR B LIANG BW TU CW

Citation: Wm. Chen et al., OPTICALLY DETECTED MAGNETIC-RESONANCE STUDIES OF LOW-TEMPERATURE INP, Journal of electronic materials, 22(12), 1993, pp. 1491-1494

Authors: JAGER ND VERMA AK DRESZER P NEWMAN N LILIENTALWEBER Z VANSCHILFGAARDE M WEBER ER

Citation: Nd. Jager et al., FIRST DIRECT OBSERVATION OF EL2-LIKE DEFECT LEVELS IN ANNEALED LT-GAAS, Journal of electronic materials, 22(12), 1993, pp. 1499-1502