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Results: 1-17 |
Results: 17
DEFORMATION AND STABILITY OF SILICON WHIS KER PROPERTIES IN THERMAL, ELASTIC AND ELECTROMAGNETIC-FIELDS
Authors: ERMAKOV AP BATARONOV IL DROZHZHIN AI YATSENKO SN
Citation: Ap. Ermakov et al., DEFORMATION AND STABILITY OF SILICON WHIS KER PROPERTIES IN THERMAL, ELASTIC AND ELECTROMAGNETIC-FIELDS, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 61(5), 1997, pp. 906-912
INFLUENCE OF ELECTRIC-CURRENT IMPULSES AN D AXIAL TENSION LOAD ON STRUCTURE AND PROPERTIES OF SILICON WHISKERS
Authors: DROZHZHIN AI ERMAKOV AP YATSENKO SN
Citation: Ai. Drozhzhin et al., INFLUENCE OF ELECTRIC-CURRENT IMPULSES AN D AXIAL TENSION LOAD ON STRUCTURE AND PROPERTIES OF SILICON WHISKERS, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 61(5), 1997, pp. 1012-1018
RELAXATION PHENOMENA IN PREVIOUS TWISTED WHISKERS OF GERMANIUM AT THEACTION OF THERMAL AND ELASTIC FIELDS
Authors: ERMAKOV AP YATSENKO SN BATARONOV IL DROZHZHIN AI
Citation: Ap. Ermakov et al., RELAXATION PHENOMENA IN PREVIOUS TWISTED WHISKERS OF GERMANIUM AT THEACTION OF THERMAL AND ELASTIC FIELDS, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 61(2), 1997, pp. 228-231
INFLUENCE OF SLOW MAGNETIC-FIELDS AND ELA STIC DEFORMATIONS ON ELECTRIC-CONDUCTIVITY OF SILICON MICROCRYSTALS
Authors: SEDYKH NK DROZHZHIN AI
Citation: Nk. Sedykh et Ai. Drozhzhin, INFLUENCE OF SLOW MAGNETIC-FIELDS AND ELA STIC DEFORMATIONS ON ELECTRIC-CONDUCTIVITY OF SILICON MICROCRYSTALS, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 61(2), 1997, pp. 257-262
INTERACTION OF DISLOCATIONS WITH POINT-DE FECTS AT LOW-TEMPERATURES IN CRYSTALS WITH HIGH PEIERLS BARRIER
Authors: ANTIPOV SA BATARONOV IL DROZHZHIN AI ROSCHUPKIN AM
Citation: Sa. Antipov et al., INTERACTION OF DISLOCATIONS WITH POINT-DE FECTS AT LOW-TEMPERATURES IN CRYSTALS WITH HIGH PEIERLS BARRIER, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 60(9), 1996, pp. 159-162
CYCLIC STRESS TESTS OF WHISKER CRYSTALS SAMPLES
Authors: BELENOV GN DROZHZHIN AI
Citation: Gn. Belenov et Ai. Drozhzhin, CYCLIC STRESS TESTS OF WHISKER CRYSTALS SAMPLES, Instruments and experimental techniques, 39(6), 1996, pp. 887-892
INFLUENCE OF THERMOMAGNETIC-FIELD AND ELE CTROMAGNETIC-FIELD ON STRUCTURE AND STABILITY OF PARAMETERS OF SILICON MICROCRYSTALS
Authors: SEDIKH NK SPICHKIN YV DROZHZHIN AI
Citation: Nk. Sedikh et al., INFLUENCE OF THERMOMAGNETIC-FIELD AND ELE CTROMAGNETIC-FIELD ON STRUCTURE AND STABILITY OF PARAMETERS OF SILICON MICROCRYSTALS, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 59(10), 1995, pp. 72-76
STRENGTH, MICROPLASTICITY AND FRACTURE OF WHISKERS AT THE CONDITION OF SMALL ELECTRIC-CURRENT AND CYCLIC BEND VIBRATIONS WITH KILOHERTZ FREQUENCY
Authors: BELENOV GN DROZHZHIN AI
Citation: Gn. Belenov et Ai. Drozhzhin, STRENGTH, MICROPLASTICITY AND FRACTURE OF WHISKERS AT THE CONDITION OF SMALL ELECTRIC-CURRENT AND CYCLIC BEND VIBRATIONS WITH KILOHERTZ FREQUENCY, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 59(10), 1995, pp. 83-86
CREEP OF GE WHISKERS AT THE UNIAXIAL TENS ION IN CONDITIONS OF SLOW ELECTRIC-FIELD
Authors: ERMAKOV AP DROZHZHIN AI
Citation: Ap. Ermakov et Ai. Drozhzhin, CREEP OF GE WHISKERS AT THE UNIAXIAL TENS ION IN CONDITIONS OF SLOW ELECTRIC-FIELD, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 59(10), 1995, pp. 97-102
KINETIC FEATURES OF TORSION STRESS-STRAIN CURVES FOR SEMICONDUCTOR WHISKERS
Authors: ANTIPOV SA BATARONOV IL DROZHZHIN AI ERMAKOV AP ROSHCHUPKIN AM
Citation: Sa. Antipov et al., KINETIC FEATURES OF TORSION STRESS-STRAIN CURVES FOR SEMICONDUCTOR WHISKERS, Physica status solidi. a, Applied research, 149(2), 1995, pp. 637-648
METHOD FOR DETERMINING THE SENSITIVITY OF UNBONDED SILICON-WHISKER RESISTANCE-STRAIN GAUGES
Authors: ANTIPOV SA DROZHZHIN AI
Citation: Sa. Antipov et Ai. Drozhzhin, METHOD FOR DETERMINING THE SENSITIVITY OF UNBONDED SILICON-WHISKER RESISTANCE-STRAIN GAUGES, Industrial laboratory, 60(2), 1994, pp. 129-130
CHANGE IN THE ELECTRICAL-RESISTANCE OF STRAIN-GAUGES DUE TO BENDING
Authors: ANTIPOV SA BATARONOV IA DROZHZHIN AI ROSHCHUPKIN AM
Citation: Sa. Antipov et al., CHANGE IN THE ELECTRICAL-RESISTANCE OF STRAIN-GAUGES DUE TO BENDING, Semiconductors, 27(6), 1993, pp. 508-511
GERMANIUM WHISKER MICROPLASTICITY UNDER C YCLING ON HERTZS FREQUENCIES
Authors: DROZHZHIN AI ERMAKOV AP
Citation: Ai. Drozhzhin et Ap. Ermakov, GERMANIUM WHISKER MICROPLASTICITY UNDER C YCLING ON HERTZS FREQUENCIES, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 57(11), 1993, pp. 12-20
DISLOCATION SPECTRUM OF INTERNAL-FRICTION AND PLASTICITY IN SILICON WHISKERS AT THE ALTERNATE TORSION
Authors: ANTIPOV SA DROZHZHIN AI
Citation: Sa. Antipov et Ai. Drozhzhin, DISLOCATION SPECTRUM OF INTERNAL-FRICTION AND PLASTICITY IN SILICON WHISKERS AT THE ALTERNATE TORSION, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 57(11), 1993, pp. 21-25
CREEP OF PRELIMINARY PLASTICALLY TWISTED GERMANIUM WHISKERS AT THE UNIAXIAL TENSION
Authors: DROZHZHIN AI ERMAKOV AP LABED LI
Citation: Ai. Drozhzhin et al., CREEP OF PRELIMINARY PLASTICALLY TWISTED GERMANIUM WHISKERS AT THE UNIAXIAL TENSION, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 57(11), 1993, pp. 106-111
WHISKER MICROPLASTICITY AT THE CYCLIC LOA DING
Authors: BELENOV GN DROZHZHIN AI LABED LI
Citation: Gn. Belenov et al., WHISKER MICROPLASTICITY AT THE CYCLIC LOA DING, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 57(11), 1993, pp. 112-114
RELAXATION PHENOMENA IN SYSTEM OF BINDER SILICON WHISKER
Authors: DROZHZHIN AI CEDIKH NK GUKOV VD YUYUKIN NA LABED LI
Citation: Ai. Drozhzhin et al., RELAXATION PHENOMENA IN SYSTEM OF BINDER SILICON WHISKER, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 57(11), 1993, pp. 146-150
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