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Results:
1-7
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Results: 7
Authors:
ZAKNOUNE M
BONTE B
GAQUIERE C
CORDIER Y
DRUELLE Y
THERON D
CROSNIER Y
Citation: M. Zaknoune et al., INALAS INGAAS METAMORPHIC HEMT WITH HIGH-CURRENT DENSITY AND HIGH BREAKDOWN VOLTAGE/, IEEE electron device letters, 19(9), 1998, pp. 345-347
Authors:
CORDIER Y
BOLLAERT S
DIPERSIO J
FERRE D
TRUDEL S
DRUELLE Y
CAPPY A
Citation: Y. Cordier et al., MBE GROWN INALAS INGAAS LATTICE-MISMATCHED LAYERS FOR HEMT APPLICATION ON GAAS SUBSTRATE/, Applied surface science, 123, 1998, pp. 734-737
Authors:
WIN P
DRUELLE Y
CORDIER Y
ADAM D
FAVRE J
CAPPY A
Citation: P. Win et al., HIGH-PERFORMANCE IN0.3GA0.7AS IN0.29AL0.71AS/GAAS METAMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR/, JPN J A P 1, 33(6A), 1994, pp. 3343-3347
Authors:
WESTPHALEN R
BOUDART B
THERON D
WALLART X
DRUELLE Y
CROSNIER Y
Citation: R. Westphalen et al., TEMPERATURE-MEASUREMENTS OF LT GAAS DIODES, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 78-81
Authors:
CONSTANT M
MATRULLO N
LORRIAUX A
FAUQUEMBERGUE R
DRUELLE Y
DIPERSIO J
Citation: M. Constant et al., RAMAN-SCATTERING IN INXGA1-XAS GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY/, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 69-72
Authors:
WIN P
DRUELLE Y
LEGRY P
LEPILLIET S
CAPPY A
CORDIER Y
FAVRE J
Citation: P. Win et al., MICROWAVE PERFORMANCE OF 0.4-MU-M GATE METAMORPHIC IN0.29AL0.71AS IN0.3GA0.7AS HEMT ON GAAS SUBSTRATE, Electronics Letters, 29(2), 1993, pp. 169-170
Authors:
DEMEERSCHMAN C
SIEBER B
FARVACQUE JL
DRUELLE Y
Citation: C. Demeerschman et al., MICROSCALE CHARACTERIZATION OF EPITAXIAL SEMICONDUCTING HOMOLAYERS .1. CATHODOLUMINESCENCE, Microscopy microanalysis microstructures, 3(6), 1992, pp. 483-499
Risultati:
1-7
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