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Results: 1-19 |
Results: 19
CHARACTERIZATION OF ALN BUFFER LAYERS ON (0001)-SAPPHIRE SUBSTRATES
Authors: LEVAILLANT YM BISARO R OLIVIER J DURAND O DUBOZ JY RUFFENACHCLUR S BRIOT O GIL B AULOMBARD RL
Citation: Ym. Levaillant et al., CHARACTERIZATION OF ALN BUFFER LAYERS ON (0001)-SAPPHIRE SUBSTRATES, Journal of crystal growth, 190, 1998, pp. 282-286
REALIZATION AND OPTICAL CHARACTERIZATION OF ETCHED MIRROR FACETS IN GAN CAVITIES
Authors: BINET F DUBOZ JY LAURENT N BONNAT C COLLOT P HANAUER F BRIOT O AULOMBARD RL
Citation: F. Binet et al., REALIZATION AND OPTICAL CHARACTERIZATION OF ETCHED MIRROR FACETS IN GAN CAVITIES, Applied physics letters, 72(8), 1998, pp. 960-962
MODE-COUPLING AND INTERSUBBAND TRANSITION RABI SPLITTING IN MICROCAVITIES
Authors: DUBOZ JY
Citation: Jy. Duboz, MODE-COUPLING AND INTERSUBBAND TRANSITION RABI SPLITTING IN MICROCAVITIES, Journal de physique. I, 7(12), 1997, pp. 1693-1700
CHARACTERIZATION OF AIN BUFFER LAYERS ON (0001)-SAPPHIRE SUBSTRATES
Authors: LEVAILLANT YM BISARO R OLIVIER J DURAND O DUBOZ JY RUFFENACHCLUR S BRIOT O GIL B AULOMBARD RL
Citation: Ym. Levaillant et al., CHARACTERIZATION OF AIN BUFFER LAYERS ON (0001)-SAPPHIRE SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 32-37
OPTICAL-PUMPING IN NITRIDE CAVITIES WITH ETCHED MIRROR FACETS
Authors: BINET F DUBOZ JY LAURENT N BONNAT C COLLOT P HANAUER F BRIOT O GIL B SCHOLZ F OFF J SOHMER A
Citation: F. Binet et al., OPTICAL-PUMPING IN NITRIDE CAVITIES WITH ETCHED MIRROR FACETS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 183-187
DIFFUSION LENGTH OF PHOTOEXCITED CARRIERS IN GAN
Authors: DUBOZ JY BINET F DOLFI D LAURENT N SCHOLZ F OFF J SOHMER A BRIOT O GIL B
Citation: Jy. Duboz et al., DIFFUSION LENGTH OF PHOTOEXCITED CARRIERS IN GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 289-295
ELECTRIC-FIELD EFFECTS ON EXCITONS IN GALLIUM NITRIDE
Authors: DUBOZ JY BINET F ROSENCHER E SCHOLZ F HARLE V
Citation: Jy. Duboz et al., ELECTRIC-FIELD EFFECTS ON EXCITONS IN GALLIUM NITRIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 269-273
PROPERTIES OF A PHOTOVOLTAIC DETECTOR BASED ON AN N-TYPE GAN SCHOTTKY-BARRIER
Authors: BINET F DUBOZ JY LAURENT N ROSENCHER E BRIOT O AULOMBARD RL
Citation: F. Binet et al., PROPERTIES OF A PHOTOVOLTAIC DETECTOR BASED ON AN N-TYPE GAN SCHOTTKY-BARRIER, Journal of applied physics, 81(9), 1997, pp. 6449-6454
LARGE INFRARED MODULATION DEPTH OBTAINED IN THE NORMAL INCIDENCE REFLECTION ON A GRATING-COUPLED WITH INTERSUBBAND TRANSITIONS
Authors: DUBOZ JY BERGER V LAURENT N ADAM D NAGLE J
Citation: Jy. Duboz et al., LARGE INFRARED MODULATION DEPTH OBTAINED IN THE NORMAL INCIDENCE REFLECTION ON A GRATING-COUPLED WITH INTERSUBBAND TRANSITIONS, Applied physics letters, 71(12), 1997, pp. 1697-1699
GRATING-COUPLED INFRARED MODULATOR AT NORMAL INCIDENCE BASED ON INTERSUBBAND TRANSITIONS
Authors: DUBOZ JY BERGER V LAURENT N ADAM D NAGLE J
Citation: Jy. Duboz et al., GRATING-COUPLED INFRARED MODULATOR AT NORMAL INCIDENCE BASED ON INTERSUBBAND TRANSITIONS, Applied physics letters, 70(12), 1997, pp. 1569-1571
ELECTRIC-FIELD EFFECTS ON EXCITONS IN GALLIUM NITRIDE
Authors: BINET F DUBOZ JY ROSENCHER E SCHOLZ F HARLE V
Citation: F. Binet et al., ELECTRIC-FIELD EFFECTS ON EXCITONS IN GALLIUM NITRIDE, Physical review. B, Condensed matter, 54(11), 1996, pp. 8116-8121
GRATING-COUPLED INTERSUBBAND TRANSITIONS IN MICROCAVITIES
Authors: DUBOZ JY
Citation: Jy. Duboz, GRATING-COUPLED INTERSUBBAND TRANSITIONS IN MICROCAVITIES, Journal of applied physics, 80(9), 1996, pp. 5432-5443
SELF-CONSISTENT MODEL FOR QUANTUM-WELL INFRARED PHOTODETECTORS
Authors: THIBAUDEAU L BOIS P DUBOZ JY
Citation: L. Thibaudeau et al., SELF-CONSISTENT MODEL FOR QUANTUM-WELL INFRARED PHOTODETECTORS, Journal of applied physics, 79(1), 1996, pp. 446-454
MECHANISMS OF RECOMBINATION IN GAN PHOTODETECTORS
Authors: BINET F DUBOZ JY ROSENCHER E SCHOLZ F HARLE V
Citation: F. Binet et al., MECHANISMS OF RECOMBINATION IN GAN PHOTODETECTORS, Applied physics letters, 69(9), 1996, pp. 1202-1204
ELECTRON LIFETIME MEASUREMENTS IN MQW DETECTORS - ABSORPTION AND PHOTORESPONSE SATURATION BY A FREE-ELECTRON LASER
Authors: DUBOZ JY COSTARD E ROSENCHER E BOIS P BERSET JM JAROSZYNSKI D ORTEGA JM
Citation: Jy. Duboz et al., ELECTRON LIFETIME MEASUREMENTS IN MQW DETECTORS - ABSORPTION AND PHOTORESPONSE SATURATION BY A FREE-ELECTRON LASER, Superlattices and microstructures, 17(1), 1995, pp. 11-13
EFFECT OF ASYMMETRIC BARRIERS ON PERFORMANCES OF GAAS ALGAAS QUANTUM-WELL DETECTORS/
Authors: DUBOZ JY SAMINADAYAR L GERARD JM
Citation: Jy. Duboz et al., EFFECT OF ASYMMETRIC BARRIERS ON PERFORMANCES OF GAAS ALGAAS QUANTUM-WELL DETECTORS/, Journal of applied physics, 78(4), 1995, pp. 2803-2807
ELECTRON-CAPTURE TIME MEASUREMENTS IN GAAS ALGAAS QUANTUM-WELL INFRARED PHOTODETECTORS - PHOTORESPONSE SATURATION BY A FREE-ELECTRON LASER/
Authors: DUBOZ JY COSTARD E NAGLE J BERSET JM ORTEGA JM GERARD JM
Citation: Jy. Duboz et al., ELECTRON-CAPTURE TIME MEASUREMENTS IN GAAS ALGAAS QUANTUM-WELL INFRARED PHOTODETECTORS - PHOTORESPONSE SATURATION BY A FREE-ELECTRON LASER/, Journal of applied physics, 78(2), 1995, pp. 1224-1229
ELECTRON RELAXATION-TIME MEASUREMENTS IN GAAS ALGAAS QUANTUM-WELLS - INTERSUBBAND ABSORPTION SATURATION BY A FREE-ELECTRON LASER/
Authors: DUBOZ JY COSTARD E ROSENCHER E BOIS P NAGLE J BERSET JM JAROSZYNSKI D ORTEGA JM
Citation: Jy. Duboz et al., ELECTRON RELAXATION-TIME MEASUREMENTS IN GAAS ALGAAS QUANTUM-WELLS - INTERSUBBAND ABSORPTION SATURATION BY A FREE-ELECTRON LASER/, Journal of applied physics, 77(12), 1995, pp. 6492-6495
MONOLITHIC SPECTROMETER BASED ON INTERSUBBAND TRANSITIONS IN QUANTUM-WELLS
Authors: DUBOZ JY ROSENCHER E LAURENT N
Citation: Jy. Duboz et al., MONOLITHIC SPECTROMETER BASED ON INTERSUBBAND TRANSITIONS IN QUANTUM-WELLS, IEEE journal of quantum electronics, 30(7), 1994, pp. 1507-1510
Risultati: 1-19 |