Citation: M. Dur et Sm. Goodnick, INTERFACE EFFECTS ON INTERSUBBAND CARRIER RELAXATION IN GAAS ALGAAS QUANTUM-WELLS/, Semiconductor science and technology, 13(8A), 1998, pp. 143-146
Citation: M. Dur et al., NECESSARY AND SUFFICIENT GLOBAL OPTIMALITY CONDITIONS FOR CONVEX MAXIMIZATION REVISITED, Journal of mathematical analysis and applications, 217(2), 1998, pp. 637-649
Citation: M. Dur et al., MONTE-CARLO STUDIES OF INTERSUBBAND RELAXATION IN WIDE GAAS ALGAAS QUANTUM-WELLS/, Physica status solidi. b, Basic research, 204(1), 1997, pp. 170-173
Authors:
REIGROTZKI M
DUR M
SCHATTKE W
FITZER N
REDMER R
GOODNICK SM
Citation: M. Reigrotzki et al., HIGH-FIELD TRANSPORT AND IMPACT IONIZATION IN WIDE BANDGAP SEMICONDUCTORS, Physica status solidi. b, Basic research, 204(1), 1997, pp. 528-530
Citation: M. Dur et R. Horst, LAGRANGE DUALITY AND PARTITIONING TECHNIQUES IN NONCONVEX GLOBAL OPTIMIZATION, Journal of optimization theory and applications, 95(2), 1997, pp. 347-369
Authors:
MURDIN BN
LANGERAK CJGM
HELM M
KRUCK P
HEISS W
ROSSKOPF V
STRASSER G
GORNIK E
DUR M
GOODNICK SM
LEE SC
GALBRAITH I
PIDGEON CR
Citation: Bn. Murdin et al., TIME-RESOLVED STUDIES OF INTERSUBBAND RELAXATION IN GAAS ALGAAS QUANTUM-WELLS BELOW THE OPTICAL PHONON ENERGY USING A FREE-ELECTRON LASER/, Superlattices and microstructures, 19(1), 1996, pp. 17-24
Authors:
REIGROTZKI M
REDMER R
LEE I
PENNATHUR SS
DUR M
WAGER JF
GOODNICK SM
VOGL P
ECKSTEIN H
SCHATTKE W
Citation: M. Reigrotzki et al., IMPACT IONIZATION RATE AND HIGH-FIELD TRANSPORT IN ZNS WITH NONLOCAL BAND-STRUCTURE, Journal of applied physics, 80(9), 1996, pp. 5054-5060
Citation: M. Dur et al., BAND-WARPING-INDUCED TRANSVERSE POPULATION-INVERSION OF HOT HEAVY HOLES IN GERMANIUM AT HIGH ELECTRIC-FIELDS, Physical review. B, Condensed matter, 52(15), 1995, pp. 10701-10704
Citation: M. Dur et al., EFFECT OF VALENCE-BAND ANISOTROPY AND NONPARABOLICITY ON TOTAL SCATTERING RATES FOR HOLES IN NONPOLAR SEMICONDUCTORS, Physical review. B, Condensed matter, 49(19), 1994, pp. 13991-13994