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Results:
1-7
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Results: 7
Authors:
BOLOGNESI CR
DVORAK MW
CHOW DH
Citation: Cr. Bolognesi et al., HIGH-TRANSCONDUCTANCE DELTA-DOPED INAS ALSB HFETS WITH ULTRATHIN SILICON-DOPED INAS QUANTUM-WELL DONOR LAYER/, IEEE electron device letters, 19(3), 1998, pp. 83-85
Authors:
BOLOGNESI CR
DVORAK MW
CHOW DH
Citation: Cr. Bolognesi et al., INAS ALSB HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS USING A SI-DOPED INAS/ALSB SHORT-PERIOD SUPERLATTICE MODULATION DOPING BARRIER/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 843-845
Authors:
BOLOGNESI CR
DVORAK MW
CHOW DH
Citation: Cr. Bolognesi et al., GATE METALLURGY EFFECTS IN INAS ALSB HFETS - PRELIMINARY-RESULTS AND DEMONSTRATION OF SURFACE FERMI-LEVEL SHIFTS/, Journal of electronic materials, 27(8), 1998, pp. 54-57
Authors:
MATINE N
DVORAK MW
BOLOGNESI CR
XU X
HU J
WATKINS SP
THEWALT MLW
Citation: N. Matine et al., NEARLY IDEAL INP GAASSB/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORSWITH BALLISTICALLY LAUNCHED COLLECTOR ELECTRONS/, Electronics Letters, 34(17), 1998, pp. 1700-1702
Authors:
BOLOGNESI CR
DVORAK MW
CHOW DH
Citation: Cr. Bolognesi et al., SIDEGATING-INDUCED NEGATIVE DIFFERENTIAL RESISTANCE IN MBE-GROWN INASALSB HFETS/, JPN J A P 1, 36(3B), 1997, pp. 1789-1794
Authors:
BOLOGNESI CR
DVORAK MW
SOERENSEN G
WATKINS SP
Citation: Cr. Bolognesi et al., IMPROVED BREAKDOWN VOLTAGES IN SUBMICROMETER PLANAR GAAS-MESFETS WITHA THIN (GA,IN)P SURFACE-LAYER, Electronics Letters, 33(7), 1997, pp. 636-637
Authors:
DVORAK MW
BOLOGNESI CR
CHOW DH
Citation: Mw. Dvorak et al., DEMONSTRATION OF NAND LOGIC SWITCHING IN INAS ALSB DUAL-GATE HFETS/, Electronics Letters, 32(24), 1996, pp. 2273-2274
Risultati:
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