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Results:
1-7
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Results: 7
Authors:
Strassner, M
Daleiden, J
Chitica, N
Keiper, D
Stalnacke, B
Greek, S
Hjort, K
Citation: M. Strassner et al., III-V semiconductor material for tunable Fabry-Perot filters for coarse and dense WDM systems, SENS ACTU-A, 85(1-3), 2000, pp. 249-255
Quantitative evaluation of growth-induced residual stress in InP epitaxialmicromechanical structures
Authors:
Chitica, N
Strassner, M
Daleiden, J
Citation: N. Chitica et al., Quantitative evaluation of growth-induced residual stress in InP epitaxialmicromechanical structures, APPL PHYS L, 77(2), 2000, pp. 202-204
Authors:
Chitica, N
Daleiden, J
Strassner, M
Streubel, K
Citation: N. Chitica et al., Monolithic InP-Based tunable filter with 10-nm bandwidth for optical data interconnects in the 1550-nm band, IEEE PHOTON, 11(5), 1999, pp. 584-586
Authors:
Peerlings, J
Riemenschneider, R
Kumar, VN
Strassner, M
Pfeiffer, J
Scheuer, V
Daleiden, J
Mutamba, K
Herbst, S
Hartnagel, HL
Meissner, P
Citation: J. Peerlings et al., Two-chip InGaAs-InP Fabry-Perot p-i-n receiver for WDM systems, IEEE PHOTON, 11(2), 1999, pp. 260-262
Authors:
Chitica, N
Daleiden, J
Bentell, J
Andre, J
Strassner, M
Greek, S
Pasquariello, D
Karlsson, M
Gupta, R
Hjort, K
Citation: N. Chitica et al., Fabrication of tunable InP/air-gap Fabry-Perot cavities by selective etching of InGaAs sacrificial layers, PHYS SCR, T79, 1999, pp. 131-134
Authors:
Salomonsson, F
Rapp, S
Streubel, K
Hammar, M
Daleiden, J
Citation: F. Salomonsson et al., InP-based 1.55 mu m resonant cavity light-emitting diode with two epitaxial mirrors, PHYS SCR, T79, 1999, pp. 135-137
Authors:
Daleiden, J
Kiefer, R
Klussmann, S
Kunzer, M
Manz, C
Wailher, M
Braunstein, J
Weimann, G
Citation: J. Daleiden et al., Chemically-assisted ion-beam etching of (AlGa)As/GaAs: lattice damage and removal by in-situ Cl-2 treatment, MICROEL ENG, 45(1), 1999, pp. 9-14
Risultati:
1-7
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