Authors: Damlencourt, JF Leclercq, JL Gendry, M Garrigues, M Aberkane, N Hollinger, G

Citation: Jf. Damlencourt et al., Paramorphic growth: A new approach in mismatched heteroepitaxy to prepare fully relaxed materials, JPN J A P 2, 38(9AB), 1999, pp. L996-L999

Authors: Damlencourt, JF Leclercq, JL Gendry, M Regreny, P Hollinger, G

Citation: Jf. Damlencourt et al., High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach, APPL PHYS L, 75(23), 1999, pp. 3638-3640