Authors: Bonar, JM Willoughby, AFW Dan, AH McGregor, BM Lerch, W Loeffelmacher, D Cooke, GA Dowsett, MG

Citation: Jm. Bonar et al., Antimony and boron diffusion in SiGe and Si under the influence of injected point defects, J MAT S-M E, 12(4-6), 2001, pp. 219-221