Authors: Danelon, V Aniel, F Benchimol, JL Mba, J Riet, M Crozat, P Vernet, G Adde, R

Citation: V. Danelon et al., Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors, IEEE MICR G, 9(5), 1999, pp. 195-197