Authors: Danielsson, E Lee, SK Zetterling, CM Ostling, M

Citation: E. Danielsson et al., Inductively coupled plasma etch damage in 4H-SiC investigated by Schottky diode characterization, J ELEC MAT, 30(3), 2001, pp. 247-252

Authors: Danielsson, E Zetterling, CM Ostling, M Nikolaev, A Nikitina, IP Dmitriev, V

Citation: E. Danielsson et al., Fabrication and characterization of heterojunction diodes with HVPE-Grown GaN on 4H-SiC, IEEE DEVICE, 48(3), 2001, pp. 444-449

Authors: Lee, SK Zetterling, CM Danielsson, E Ostling, M Palmquist, JP Hogberg, H Jansson, U

Citation: Sk. Lee et al., Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H-silicon carbide, APPL PHYS L, 77(10), 2000, pp. 1478-1480

Authors: Danielsson, E Zetterling, CM Ostling, M Breitholtz, B Linthicum, K Thomson, DB Nam, OH Davis, RF

Citation: E. Danielsson et al., Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes, MAT SCI E B, 61-2, 1999, pp. 320-324

Authors: Danielsson, E Breitholtz, B Zetterling, CM Ostling, M

Citation: E. Danielsson et al., Simulation study of on-state losses as function of carrier life-time for aGaN/SiC high power HBT design, PHYS SCR, T79, 1999, pp. 290-293