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Results: 1-2 |
Results: 2
Influence of growth conditions in the case of molecular-beam epitaxy on photoluminescence spectra of GaAs/InAs/GaAs heterostructures with quantum dots near their initiation threshold
Authors: Mokerov, VG Fedorov, YV Guk, AV Khabarov, YV Pak, KS Danilochkin, AV
Citation: Vg. Mokerov et al., Influence of growth conditions in the case of molecular-beam epitaxy on photoluminescence spectra of GaAs/InAs/GaAs heterostructures with quantum dots near their initiation threshold, DOKL PHYS, 45(10), 2000, pp. 512-514
Optical and electrical properties of the InAs/GaAs modulation-doped superlattices for InAs-layer thicknesses below and near the quantum-dot-formationthreshold
Authors: Mokerov, VG Fedorov, YV Guk, AV Pak, KS Khabarov, YV Danilochkin, AV
Citation: Vg. Mokerov et al., Optical and electrical properties of the InAs/GaAs modulation-doped superlattices for InAs-layer thicknesses below and near the quantum-dot-formationthreshold, DOKL PHYS, 45(10), 2000, pp. 523-527
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