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Results: 1-6 |
Results: 6

Authors: Danilov, I Pataro, LL de Castro, MPP do Nascimento, GC Frateschi, NC
Citation: I. Danilov et al., Electrical and optical effects of He+ ion irradiation in InGaP/GaAs/InGaAslasers, NUCL INST B, 175, 2001, pp. 782-786

Authors: Danilov, I de Souza, JP Murel, AV Pudenzi, MAA
Citation: I. Danilov et al., Electrical activation of carbon in GaAs: Implantation temperature effects, APPL PHYS L, 78(12), 2001, pp. 1700-1702

Authors: Danilov, I Pataro, LL de Castro, MPP Frateschi, NC
Citation: I. Danilov et al., Electrical isolation and transparency in ion-irradiated p-InGaP/GaAs/InGaAs structures, J APPL PHYS, 88(12), 2000, pp. 7354-7356

Authors: Danilov, I de Souza, JP Boudinov, H Murel, AV Daniltsev, VM Shashkin, VI
Citation: I. Danilov et al., Electrical isolation of a silicon delta-doped layer in GaAs by ion irradiation, APPL PHYS L, 75(13), 1999, pp. 1917-1919

Authors: de Souza, JP Danilov, I Boudinov, H
Citation: Jp. De Souza et al., Electrical isolation of GaAs by light ion irradiation damage, RADIAT EFF, 147(1-2), 1998, pp. 109-120

Authors: de Souza, JP Danilov, I Boudinov, H
Citation: Jp. De Souza et al., Electrical isolation of n-type GaAs layers by proton bombardment: Effects of the irradiation temperature, J APPL PHYS, 84(9), 1998, pp. 4757-4760
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