Citation: S. Dannefaer et al., Positron annihilation study of vacancies in type IIa diamonds illuminated with monochromatic light, DIAM RELAT, 10(12), 2001, pp. 2113-2117
Citation: A. Pu et al., Positron annihilation investigation of vacancies in as-grown and electron-irradiated diamonds, DIAM RELAT, 9(8), 2000, pp. 1450-1463
Authors:
Larsen, AN
Goubet, JJ
Mejlholm, P
Christensen, JS
Fanciulli, M
Gunnlaugsson, HP
Weyer, G
Petersen, JW
Resende, A
Kaukonen, M
Jones, R
Oberg, S
Briddon, PR
Svensson, BG
Lindstrom, JL
Dannefaer, S
Citation: An. Larsen et al., Tin-vacancy acceptor levels in electron-irradiated n-type silicon, PHYS REV B, 62(7), 2000, pp. 4535-4544
Citation: S. Dannefaer et V. Avalos, Positron annihilation study of divacancies in silicon illuminated by monochromatic light, PHYS REV B, 60(3), 1999, pp. 1729-1733
Citation: S. Dannefaer et al., Characterization of vacancies in as-grown and electron irradiated alpha-quartz by means of positron annihilation, J APPL PHYS, 86(1), 1999, pp. 190-197
Citation: S. Dannefaer et al., Positron annihilation investigation of porous silicon heat treated to 1000degrees C, J APPL PHYS, 84(12), 1998, pp. 6559-6564