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Results: 1-9 |
Results: 9
Large area electron scattering effects on SCALPEL mask critical dimension control
Authors: Nordquist, K Resnick, DJ Ivin, V Mangat, P Lu, B Masnyj, Z Ainley, E Dauksher, WJ Mancini, D Silakov, M Minyushkin, D Vorotnikova, N
Citation: K. Nordquist et al., Large area electron scattering effects on SCALPEL mask critical dimension control, MICROEL ENG, 57-8, 2001, pp. 505-510
Deep silicon etch modeling for fabrication of 200-mm SCALPEL masks
Authors: Dauksher, WJ Clemens, SB Resnick, DJ Smith, KH Mangat, PJS Rauf, S Ventzek, PLG Arunachalam, V Ramamurthi, BN Ashraf, H Lea, L Hall, S Johnston, IR Hopkins, J Bhardwaj, JK
Citation: Wj. Dauksher et al., Deep silicon etch modeling for fabrication of 200-mm SCALPEL masks, MICROEL ENG, 57-8, 2001, pp. 607-612
Critical dimension issues for 200 mm electron projection masks
Authors: Resnick, DJ Nordquist, K Dauksher, WJ Ainley, E Lu, B Mangat, P Weisbrod, E Martin, C Chang, J Englestad, R Lovell, E Ivin, V
Citation: Dj. Resnick et al., Critical dimension issues for 200 mm electron projection masks, JPN J A P 1, 39(12B), 2000, pp. 6874-6880
TaSiN thin-film pattern transfer optimization for 200 mm SCALPEL and extreme ultraviolet lithography masks
Authors: Dauksher, WJ Resnick, DJ Clemens, SB Standfast, DL Masnyj, ZS Wasson, JR Bergmann, NM Han, SI Mangat, PJS
Citation: Wj. Dauksher et al., TaSiN thin-film pattern transfer optimization for 200 mm SCALPEL and extreme ultraviolet lithography masks, J VAC SCI B, 18(6), 2000, pp. 3232-3236
Simulating the mechanical response of electron-beam projection lithographymasks
Authors: Jachim, AF Chen, CF Engelstad, RL Lovell, EG Mangat, PJS Dauksher, WJ
Citation: Af. Jachim et al., Simulating the mechanical response of electron-beam projection lithographymasks, J VAC SCI B, 18(6), 2000, pp. 3248-3253
Surface modification and cleaning enhancement of TaSi(N) films with dilutehydrofluoric acid
Authors: Mangat, PJS Dauksher, WJ Whig, R O'Brien, WL
Citation: Pjs. Mangat et al., Surface modification and cleaning enhancement of TaSi(N) films with dilutehydrofluoric acid, J VAC SCI A, 18(4), 2000, pp. 1211-1215
Characterization of plasma enhanced chemical vapor deposited SiC and its application in advanced reticle technology-scattering with angular limitation in projection electron beam lithography membrane
Authors: Han, SI Mangat, PJS Smith, SM Dauksher, WJ Convey, D Gregory, RB
Citation: Si. Han et al., Characterization of plasma enhanced chemical vapor deposited SiC and its application in advanced reticle technology-scattering with angular limitation in projection electron beam lithography membrane, J VAC SCI A, 18(4), 2000, pp. 1225-1229
Extreme ultraviolet lithography mask patterning and printability studies with a Ta-based absorber
Authors: Mangat, PJS Hector, SD Thompson, MA Dauksher, WJ Cobb, J Cummings, KD Mancini, DP Resnick, DJ Cardinale, G Henderson, C Kearney, P Wedowski, M
Citation: Pjs. Mangat et al., Extreme ultraviolet lithography mask patterning and printability studies with a Ta-based absorber, J VAC SCI B, 17(6), 1999, pp. 3029-3033
Temperature gradients during absorber etching and their effect on x-ray mask patterning
Authors: Pendharkar, SV Resnick, DJ Laudon, MF Dauksher, WJ Mangat, PJS Seese, PA Cummings, KD
Citation: Sv. Pendharkar et al., Temperature gradients during absorber etching and their effect on x-ray mask patterning, J VAC SCI B, 16(6), 1998, pp. 3500-3503
Risultati: 1-9 |