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Results:
1-8
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Results: 8
Authors:
Dragnea, B
Boulmer, J
Debarre, D
Bourguignon, B
Citation: B. Dragnea et al., Influence of adsorbates on UV-pulsed laser melting of Si in ultra-high vacuum, APPL PHYS A, 73(5), 2001, pp. 609-613
Authors:
Dragnea, B
Boulmer, J
Debarre, D
Bourguignon, B
Citation: B. Dragnea et al., Growth of a SiC layer on Si(100) from adsorbed propene by laser melting, J APPL PHYS, 90(1), 2001, pp. 449-455
Authors:
Yam, V
Le Thanh, V
Compagnon, U
Gennser, U
Boucaud, P
Debarre, D
Bouchier, D
Citation: V. Yam et al., Effect of the bimodal size distribution on the optical properties of self-assembled Ge/Si(001) quantum dots, THIN SOL FI, 380(1-2), 2000, pp. 78-81
Authors:
Weisbuch, F
Lazare, S
Goodall, FN
Debarre, D
Citation: F. Weisbuch et al., Submicron-resolution ablation with a KrF excimer laser beam patterned witha projection lens, APPL PHYS A, 69, 1999, pp. S413-S417
Authors:
Le Thanh, V
Boucaud, P
Zheng, Y
Younsi, A
Debarre, D
Bouchier, D
Lourtioz, JM
Citation: V. Le Thanh et al., On the formation of self-assembled Ge/Si(001) quantum dots, J CRYST GR, 202, 1999, pp. 1212-1217
Authors:
Boucaud, P
Le Thanh, V
Sauvage, S
Debarre, D
Bouchier, D
Citation: P. Boucaud et al., Intraband absorption in Ge/Si self-assembled quantum dots, APPL PHYS L, 74(3), 1999, pp. 401-403
Authors:
Le Thanh, V
Boucaud, P
Debarre, D
Zheng, Y
Bouchier, D
Lourtioz, JM
Citation: V. Le Thanh et al., Nucleation and growth of self-assembled Ge/Si(001) quantum dots, PHYS REV B, 58(19), 1998, pp. 13115-13120
Authors:
Boucaud, P
Le Thanh, V
Sauvage, S
Debarre, D
Bouchier, D
Lourtioz, JM
Citation: P. Boucaud et al., Photoluminescence of self-assembled Ge dots grown by ultra-high-vacuum chemical vapor deposition, THIN SOL FI, 336(1-2), 1998, pp. 240-243
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