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Results:
1-7
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Results: 7
Minimization of dry etch damage in III-V semiconductors
Authors:
Rahman, M Deng, LG van den Berg, J Wilkinson, CDW
Citation:
M. Rahman et al., Minimization of dry etch damage in III-V semiconductors, J PHYS D, 34(18), 2001, pp. 2792-2797
Studies of damage in low-power reactive-ion etching of III-V semiconductors
Authors:
Rahman, M Deng, LG Wilkinson, CDW van den Berg, JA
Citation:
M. Rahman et al., Studies of damage in low-power reactive-ion etching of III-V semiconductors, J APPL PHYS, 89(4), 2001, pp. 2096-2108
Optical limiting behavior of nanosized polyicosahedral gold-silver clusters based on third-order nonlinear optical effects
Authors:
Zhang, H Zelmon, DE Deng, LG Liu, HK Teo, BK
Citation:
H. Zhang et al., Optical limiting behavior of nanosized polyicosahedral gold-silver clusters based on third-order nonlinear optical effects, J AM CHEM S, 123(45), 2001, pp. 11300-11301
Enhanced damage due to light in low-damage reactive-ion etching processes
Authors:
Deng, LG Rahman, M Wilkinson, CDW
Citation:
Lg. Deng et al., Enhanced damage due to light in low-damage reactive-ion etching processes, APPL PHYS L, 76(20), 2000, pp. 2871-2873
Design considerations for low damage process plasmas
Authors:
Rahman, M Deng, LG Boyd, A Ribayrol, A Wilkinson, CDW van den Berg, JA Armour, DG
Citation:
M. Rahman et al., Design considerations for low damage process plasmas, MICROEL ENG, 46(1-4), 1999, pp. 299-302
Contribution of atomic and molecular ions to dry-etch damage
Authors:
Deng, LG Rahman, M van den Berg, JA Wilkinson, CDW
Citation:
Lg. Deng et al., Contribution of atomic and molecular ions to dry-etch damage, APPL PHYS L, 75(2), 1999, pp. 211-213
Can dry-etching systems be designed for low damage ab initio?
Authors:
Deng, LG Rahman, M Murad, SK Boyd, A Wilkinson, CDW
Citation:
Lg. Deng et al., Can dry-etching systems be designed for low damage ab initio?, J VAC SCI B, 16(6), 1998, pp. 3334-3338
Risultati:
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