Authors: Mohammad, SN Fan, ZF Botchkarev, AE Kim, W Aktas, O Morkoc, H Shiwei, F Jones, KA Derenge, MA

Citation: Sn. Mohammad et al., Physical mechanisms underlying anomalous capacitance characteristics of platinum-gallium nitride Schottky diodes, PHIL MAG B, 81(5), 2001, pp. 453-460

Authors: Jones, KA Derenge, MA Zheleva, TS Kirchner, KW Ervin, MH Wood, MC Vispute, RD Sharma, RP Venkatesan, T

Citation: Ka. Jones et al., The properties of annealed AlN films deposited by pulsed laser deposition, J ELEC MAT, 29(3), 2000, pp. 262-267

Authors: Handy, EM Rao, MV Holland, OW Chi, PH Jones, KA Derenge, MA Vispute, RD Venkatesan, T

Citation: Em. Handy et al., Al, B, and Ga ion-implantation doping of SiC, J ELEC MAT, 29(11), 2000, pp. 1340-1345

Authors: Handy, EM Rao, MV Holland, OW Jones, KA Derenge, MA Papanicolaou, N

Citation: Em. Handy et al., Variable-dose (10(17)-10(20) cm(-3)) phosphorus ion implantation into 4H-SiC, J APPL PHYS, 88(10), 2000, pp. 5630-5634

Authors: Handy, EM Rao, MV Jones, KA Derenge, MA Chi, PH Vispute, RD Venkatesan, T Papanicolaou, NA Mittereder, J

Citation: Em. Handy et al., Effectiveness of AlN encapsulant in annealing ion-implanted SiC, J APPL PHYS, 86(2), 1999, pp. 746-751