Authors: Wallart, X Deresmes, D Mollot, F

Citation: X. Wallart et al., Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides, J CRYST GR, 227, 2001, pp. 255-259

Authors: Wallart, X Deresmes, D Mollot, F

Citation: X. Wallart et al., Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP (001) by gas-source molecular-beam epitaxy, APPL PHYS L, 78(19), 2001, pp. 2961-2963

Authors: Wallart, X Priester, C Deresmes, D Mollot, F

Citation: X. Wallart et al., Interplay between segregation, roughness, and local strains in the growth of Ga0.75In0.25P alloy, APPL PHYS L, 77(2), 2000, pp. 253-255

Authors: Wallart, X Schuler, O Deresmes, D Mollot, F

Citation: X. Wallart et al., Composition effect on the growth mode, strain relaxation, and critical thickness of tensile Ga1-xInxP layers, APPL PHYS L, 76(15), 2000, pp. 2080-2082