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Application of superfast (10(2)-10(3) degrees C/s) cooling of a solution-melt in the liquid-phase epitaxy of semiconductors
Authors: Abramov, AV Deryagin, NG Tret'yakov, DN
Citation: Av. Abramov et al., Application of superfast (10(2)-10(3) degrees C/s) cooling of a solution-melt in the liquid-phase epitaxy of semiconductors, SEMICONDUCT, 33(9), 1999, pp. 1030-1033
Structural characteristics of InP/GaAs and GaAs/InP heterostructures prepared by the liquid-phase epitaxy under the conditions of ultrafast cooling of the melt
Authors: Abramov, AV Deryagin, NG Kavardakova, EY Novikov, AG Milvidksii, MG Sokolova, NS Tret'yakov, DN Fomin, VG Yugova, TG
Citation: Av. Abramov et al., Structural characteristics of InP/GaAs and GaAs/InP heterostructures prepared by the liquid-phase epitaxy under the conditions of ultrafast cooling of the melt, CRYSTALLO R, 43(6), 1998, pp. 1046-1055
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