Authors:
Dhar, NK
Boyd, PR
Martinka, M
Dinan, JH
Almeida, LA
Goldsman, N
Citation: Nk. Dhar et al., CdZnTe heteroepitaxy on 3-inch (112) Si: Interface, surface, and layer characteristics, J ELEC MAT, 29(6), 2000, pp. 748-753
Authors:
Almeida, LA
Dhar, NK
Martinka, M
Dinan, JH
Citation: La. Almeida et al., HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature, J ELEC MAT, 29(6), 2000, pp. 754-759
Authors:
Dhar, NK
Zanatta, JP
Ferret, P
Million, A
Citation: Nk. Dhar et al., Characteristics of HgCdTe CdTe hetero-epitaxial system and mid-wave diodeson 2 inch silicon, J CRYST GR, 202, 1999, pp. 975-979
Authors:
Xin, Y
Rujirawat, S
Browning, ND
Sporken, R
Sivananthan, S
Pennycook, SJ
Dhar, NK
Citation: Y. Xin et al., The effect of As passivation on the molecular beam epitaxial growth of high-quality single-domain CdTe(111)B on Si(111) substrates, APPL PHYS L, 75(3), 1999, pp. 349-351